Presentation	1997/3/14 A Novel In-Process Screening Technique for CMOS Devices I. Yoshii, K. Hama, H. Hazama, H. Kamijo, Y. Ozawa,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	We have developed a novel in-process screening technique to eliminate infant mortality due to gate oxide defects. This technique makes it possible to stress all of gate oxides simultaneously at arbitrary high voltage for both n-channel and p-channel devices, which traditional burn-in methods does not achieve. It is demonstrated that the effectiveness of the technique applied to a 0.8μm CMOS logic LSI is significant for reducing early failures.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	CMOS / reliability / TDDB / screening / burn-in
Paper #	R96-51,CPM96-160
Date of Issue

Conference Information
Committee	CPM
Conference Date	1997/3/14(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A Novel In-Process Screening Technique for CMOS Devices
Sub Title (in English)
Keyword(1)	CMOS
Keyword(2)	reliability
Keyword(3)	TDDB
Keyword(4)	screening
Keyword(5)	burn-in
1st Author's Name	I. Yoshii
1st Author's Affiliation	Toshiba Corp.()
2nd Author's Name	K. Hama
2nd Author's Affiliation	Toshiba Microelectronics Corp.
3rd Author's Name	H. Hazama
3rd Author's Affiliation	Toshiba Corp.
4th Author's Name	H. Kamijo
4th Author's Affiliation	Toshiba Corp.
5th Author's Name	Y. Ozawa
5th Author's Affiliation	Toshiba Corp.
Date	1997/3/14
Paper #	R96-51,CPM96-160
Volume (vol)	vol.96
Number (no)	575
Page	pp.pp.-
#Pages	6
Date of Issue