Presentation | 1998/3/13 Tolerance for Single-Event Effect of Bipolar Transistors for Space and Commercial system application Takahiro Suzuki, Kenji Sugimoto, Sinichi shugyo, Satoshi Kuboyama, Sumio Matsuda, Toshio Hirao, Isamu Nashiyama, Takayuki Hirose, Hideharu Ohira, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In space, a failure mode of semiconductor devices as single event effect by a incident of a radiation from solar flare and a cosmic ray is known. In the previous study, single event effect of Power MOSFETs is studied. In this study, we observe single event effect of bipolar transistors using a measurement techniques for Power MOSFETs and obtain a data of a tolerance for single event effect of bipolar transistors. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | bipolar transistors / single event effect |
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Committee | CPM |
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Conference Date | 1998/3/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Tolerance for Single-Event Effect of Bipolar Transistors for Space and Commercial system application |
Sub Title (in English) | |
Keyword(1) | bipolar transistors |
Keyword(2) | single event effect |
1st Author's Name | Takahiro Suzuki |
1st Author's Affiliation | National Space Development Agency of Japan() |
2nd Author's Name | Kenji Sugimoto |
2nd Author's Affiliation | National Space Development Agency of Japan |
3rd Author's Name | Sinichi shugyo |
3rd Author's Affiliation | National Space Development Agency of Japan |
4th Author's Name | Satoshi Kuboyama |
4th Author's Affiliation | National Space Development Agency of Japan |
5th Author's Name | Sumio Matsuda |
5th Author's Affiliation | National Space Development Agency of Japan |
6th Author's Name | Toshio Hirao |
6th Author's Affiliation | Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment |
7th Author's Name | Isamu Nashiyama |
7th Author's Affiliation | Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment |
8th Author's Name | Takayuki Hirose |
8th Author's Affiliation | Ryoei Technica Corp. |
9th Author's Name | Hideharu Ohira |
9th Author's Affiliation | Ryoei Technica Corp. |
Date | 1998/3/13 |
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Volume (vol) | vol.97 |
Number (no) | 601 |
Page | pp.pp.- |
#Pages | 5 |
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