Presentation 1997/12/12
Study on Operation Reliability of Ultimate Low Power MOS Dynamic Inverter
Masaaki Hayashi, Chugo Fujihashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Development of low power technology for high speed integrated circuit may ultimately reach to a level where a circuit must be operated with countable small number electrons. A stochastic model, which is appropriate for analysis of fluctuation of the number of electrons, is newly introduced, and a MOS dynamic inverter circuit is analyzed. It is shown that the probability of the number of electrons in a load capacitance is given by Poisson distribution with time varying source-drain resistance parameters.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOS / Low power / Physical ultimate / Operation reliability / Dynamic inverter
Paper # CPM97-150
Date of Issue

Conference Information
Committee CPM
Conference Date 1997/12/12(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on Operation Reliability of Ultimate Low Power MOS Dynamic Inverter
Sub Title (in English)
Keyword(1) MOS
Keyword(2) Low power
Keyword(3) Physical ultimate
Keyword(4) Operation reliability
Keyword(5) Dynamic inverter
1st Author's Name Masaaki Hayashi
1st Author's Affiliation Department of Electronic Engineering, Tokyo Institute of Polytechnics()
2nd Author's Name Chugo Fujihashi
2nd Author's Affiliation Department of Electronic Engineering, Tokyo Institute of Polytechnics
Date 1997/12/12
Paper # CPM97-150
Volume (vol) vol.97
Number (no) 434
Page pp.pp.-
#Pages 8
Date of Issue