Presentation | 1997/10/31 Application of Nb film as an interlayer between Cu and SiO_2 Masakazu SAKAGAMI, Mayumi TAKEYAMA, Atsushi NOYA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Thin Nb film is examined as a diffusion barrier and an adhesion-promoting layer between Cu and SiO_2. Partial reduction of SiO_2 and oxidation of Nb are confirmed at the Nb/SiO_2 interface, which does not proceed due to annealing at 750℃. Althogh the diffusion of Nb through the Cu layer and Cu diffusion into the Nb barrier also take place, the Nb film is an excellent candidate as an interlayer between Cu and SiO_2. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cu metallization / interlayer / oxidation-reduction reaction / thermal stability |
Paper # | CPM97-122 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1997/10/31(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Application of Nb film as an interlayer between Cu and SiO_2 |
Sub Title (in English) | |
Keyword(1) | Cu metallization |
Keyword(2) | interlayer |
Keyword(3) | oxidation-reduction reaction |
Keyword(4) | thermal stability |
1st Author's Name | Masakazu SAKAGAMI |
1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology() |
2nd Author's Name | Mayumi TAKEYAMA |
2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
3rd Author's Name | Atsushi NOYA |
3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology |
Date | 1997/10/31 |
Paper # | CPM97-122 |
Volume (vol) | vol.97 |
Number (no) | 355 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |