Presentation 1997/10/31
Application of Nb film as an interlayer between Cu and SiO_2
Masakazu SAKAGAMI, Mayumi TAKEYAMA, Atsushi NOYA,
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Abstract(in English) Thin Nb film is examined as a diffusion barrier and an adhesion-promoting layer between Cu and SiO_2. Partial reduction of SiO_2 and oxidation of Nb are confirmed at the Nb/SiO_2 interface, which does not proceed due to annealing at 750℃. Althogh the diffusion of Nb through the Cu layer and Cu diffusion into the Nb barrier also take place, the Nb film is an excellent candidate as an interlayer between Cu and SiO_2.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cu metallization / interlayer / oxidation-reduction reaction / thermal stability
Paper # CPM97-122
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Committee CPM
Conference Date 1997/10/31(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Application of Nb film as an interlayer between Cu and SiO_2
Sub Title (in English)
Keyword(1) Cu metallization
Keyword(2) interlayer
Keyword(3) oxidation-reduction reaction
Keyword(4) thermal stability
1st Author's Name Masakazu SAKAGAMI
1st Author's Affiliation Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology()
2nd Author's Name Mayumi TAKEYAMA
2nd Author's Affiliation Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology
3rd Author's Name Atsushi NOYA
3rd Author's Affiliation Dept. of Electrical and Electronic Engineering, Kitami Institute of Technology
Date 1997/10/31
Paper # CPM97-122
Volume (vol) vol.97
Number (no) 355
Page pp.pp.-
#Pages 5
Date of Issue