| Presentation | 1997/10/31 Low Temperature Growth of Crystalline SiC Films and Optimization of Spatial Afterglow Plasma by Triode Plasma CVD Using Dimethylchlorosilane Masahide KIMURA, Kanji YASUI, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Crystalline SiC films were grown at low temperatures by triode plasma CVD using dimethylchlorosilane diluted with hydrogen as the source gas. Influences of the grid bias on the electron temperature in the afterglow plasma region, and on the properties of the SiC films such as crystallinity, and composition were investigated. Under negative grid bias conditions, the electron temperature in the afterglow region became about 2eV and the ion sheath potential became about 1V. By the addition of the bypass condensers between the grid electrode and grounded chamber, the electron temperature in the afterglow plasma region further decreased to about 0.2eV under a negative grid bias. The crystallinity of the SiC films grown under low electron temperatures and low ion sheath potentials in the afterglow plasma region was remarkably improved and the composition of the films became stoichiometric. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon carbide / triode plasma CVD / electron temperature / plasma space potential |
| Paper # | CPM97-120 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1997/10/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Temperature Growth of Crystalline SiC Films and Optimization of Spatial Afterglow Plasma by Triode Plasma CVD Using Dimethylchlorosilane |
| Sub Title (in English) | |
| Keyword(1) | silicon carbide |
| Keyword(2) | triode plasma CVD |
| Keyword(3) | electron temperature |
| Keyword(4) | plasma space potential |
| 1st Author's Name | Masahide KIMURA |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Kanji YASUI |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Tadashi AKAHANE |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 1997/10/31 |
| Paper # | CPM97-120 |
| Volume (vol) | vol.97 |
| Number (no) | 355 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |