Presentation 1997/10/9
Structure dependence of GaN grown on Al_2O_3 c-face by ECR-MBE
Yuui Shimizu, Tatsuya Tominari, Shingo Hokuto, Yasuo Chiba, Yasushi Nanishi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaN epilayers were grown on (0001) sapphire by electron cyclotron resonance plasma excited molecular beam epitaxy (ECR-NBE). Hexagonal GaN which is a stable phase of GaN tends to grow on the sapphire c-face preferentially. It is also known, however, that cubic GaN grows on the same substrate when growth conditions such as temperature and V/III ratio are selected. In this letter, we report structural change due to substrate bias voltage which is applied to suppress the ion induced damages.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ECR-MBE / cubic GaN / hexagonal GaN / V/III ratio / substrate bias
Paper # CPM97-106-115
Date of Issue

Conference Information
Committee CPM
Conference Date 1997/10/9(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Structure dependence of GaN grown on Al_2O_3 c-face by ECR-MBE
Sub Title (in English)
Keyword(1) ECR-MBE
Keyword(2) cubic GaN
Keyword(3) hexagonal GaN
Keyword(4) V/III ratio
Keyword(5) substrate bias
1st Author's Name Yuui Shimizu
1st Author's Affiliation Graduate School of Science and Engineering, Ritsumeikan University()
2nd Author's Name Tatsuya Tominari
2nd Author's Affiliation Graduate School of Science and Engineering, Ritsumeikan University
3rd Author's Name Shingo Hokuto
3rd Author's Affiliation Graduate School of Science and Engineering, Ritsumeikan University
4th Author's Name Yasuo Chiba
4th Author's Affiliation Graduate School of Science and Engineering, Ritsumeikan University
5th Author's Name Yasushi Nanishi
5th Author's Affiliation Graduate School of Science and Engineering, Ritsumeikan University
Date 1997/10/9
Paper # CPM97-106-115
Volume (vol) vol.97
Number (no) 307
Page pp.pp.-
#Pages 6
Date of Issue