Presentation | 1997/10/9 Structure dependence of GaN grown on Al_2O_3 c-face by ECR-MBE Yuui Shimizu, Tatsuya Tominari, Shingo Hokuto, Yasuo Chiba, Yasushi Nanishi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaN epilayers were grown on (0001) sapphire by electron cyclotron resonance plasma excited molecular beam epitaxy (ECR-NBE). Hexagonal GaN which is a stable phase of GaN tends to grow on the sapphire c-face preferentially. It is also known, however, that cubic GaN grows on the same substrate when growth conditions such as temperature and V/III ratio are selected. In this letter, we report structural change due to substrate bias voltage which is applied to suppress the ion induced damages. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ECR-MBE / cubic GaN / hexagonal GaN / V/III ratio / substrate bias |
Paper # | CPM97-106-115 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1997/10/9(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Structure dependence of GaN grown on Al_2O_3 c-face by ECR-MBE |
Sub Title (in English) | |
Keyword(1) | ECR-MBE |
Keyword(2) | cubic GaN |
Keyword(3) | hexagonal GaN |
Keyword(4) | V/III ratio |
Keyword(5) | substrate bias |
1st Author's Name | Yuui Shimizu |
1st Author's Affiliation | Graduate School of Science and Engineering, Ritsumeikan University() |
2nd Author's Name | Tatsuya Tominari |
2nd Author's Affiliation | Graduate School of Science and Engineering, Ritsumeikan University |
3rd Author's Name | Shingo Hokuto |
3rd Author's Affiliation | Graduate School of Science and Engineering, Ritsumeikan University |
4th Author's Name | Yasuo Chiba |
4th Author's Affiliation | Graduate School of Science and Engineering, Ritsumeikan University |
5th Author's Name | Yasushi Nanishi |
5th Author's Affiliation | Graduate School of Science and Engineering, Ritsumeikan University |
Date | 1997/10/9 |
Paper # | CPM97-106-115 |
Volume (vol) | vol.97 |
Number (no) | 307 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |