| Presentation | 1997/10/9 Improvement of optical properties of strain-induced quantum dots self-formed in GaP/InP short period superlattices grown on GaAs(N11) S.J. Kim, H. Asahi, M. Takemoto, Fudeta M. /, S. Gonda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Optical properties of multilayer quantum dots (MQDs) self-formed in the GaP/InP short period superlattice (SL)/InGaP multilayer structures are investigated by changing SL period (P) and InGaP barrier thickness (B). By decreasing P, photoluminescence (PL) peak energy shifts toward higher energy due to quantum size effect along the growth direction (vertical direction). PL peak broadening with temperature is reduced by decreasing P and B. This improvement is attributed to the reduction of potential distribution among QDs and the enhancement of quantum confinement along the vertical direction, and to the enhancement of quantum confinement due to the vertical coupling effect between QDs. Very small temperature variation of PL peak energy is observed in these MQDs which comes from the existence of the multiaxial strains for the MQDs. The MQDs LED structure shows the excellent electroluminescence(EL) properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum dot / self-organization / GaP/InP superlattice / PL / TEM / LED |
| Paper # | CPM97-106-115 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1997/10/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of optical properties of strain-induced quantum dots self-formed in GaP/InP short period superlattices grown on GaAs(N11) |
| Sub Title (in English) | |
| Keyword(1) | quantum dot |
| Keyword(2) | self-organization |
| Keyword(3) | GaP/InP superlattice |
| Keyword(4) | PL |
| Keyword(5) | TEM |
| Keyword(6) | LED |
| 1st Author's Name | S.J. Kim |
| 1st Author's Affiliation | Osaka. Univ. ISIR() |
| 2nd Author's Name | H. Asahi |
| 2nd Author's Affiliation | Osaka. Univ. ISIR |
| 3rd Author's Name | M. Takemoto |
| 3rd Author's Affiliation | Osaka. Univ. ISIR |
| 4th Author's Name | Fudeta M. / |
| 4th Author's Affiliation | Osaka. Univ. ISIR |
| 5th Author's Name | S. Gonda |
| 5th Author's Affiliation | Osaka. Univ. ISIR |
| Date | 1997/10/9 |
| Paper # | CPM97-106-115 |
| Volume (vol) | vol.97 |
| Number (no) | 307 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |