| Presentation | 1997/10/8 Optical Properties of TlInGaP layers grown by gas source MBE H. Koh, H. Asahi, M. Fushida, K. Yamamoto, K. Takenaka, K. Asami, S. Gonda, K. Oe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | TlInP, TlGaP and TlInGaP layers are grown by gas source MBE and the temperature-dependence of their bandgap energy is characterized with the photoconductance measurement. This material system was recently proposed by us for 0.9μm to over 10μm optical devices as well as temperature-insensitive-wavelength laser diodes. Photoconductance measurement on TlInP, TlGaP and TlInGaP shows that the temperature variation of bandgap energy is smaller than that of InAs as expected. This result suggests that the existence of temperature-independent bandgap energy for TlInGaP alloys with larger Tl composition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | TlInGaP / temperature-insensitive / gas source MBE / photoconductance |
| Paper # | CPM97-100-105 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1997/10/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical Properties of TlInGaP layers grown by gas source MBE |
| Sub Title (in English) | |
| Keyword(1) | TlInGaP |
| Keyword(2) | temperature-insensitive |
| Keyword(3) | gas source MBE |
| Keyword(4) | photoconductance |
| 1st Author's Name | H. Koh |
| 1st Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University() |
| 2nd Author's Name | H. Asahi |
| 2nd Author's Affiliation | NTT Opto-electronics Laboratories |
| 3rd Author's Name | M. Fushida |
| 3rd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| 4th Author's Name | K. Yamamoto |
| 4th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| 5th Author's Name | K. Takenaka |
| 5th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| 6th Author's Name | K. Asami |
| 6th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| 7th Author's Name | S. Gonda |
| 7th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
| 8th Author's Name | K. Oe |
| 8th Author's Affiliation | NTT Opto-electronics Laboratories |
| Date | 1997/10/8 |
| Paper # | CPM97-100-105 |
| Volume (vol) | vol.97 |
| Number (no) | 306 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |