| Presentation | 1997/5/22 Evaluation of the capture cross section and the energy level of electron traps in 3C-SiC using the DLTS measurement Y. Koga, T. Abe, N. Yamada, M. Ichimura, Y. Tokuda, E. Arai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | n-type 3C-SiC was grown on Si(100) substrates by chemical vapor deposition and characterized by the DLTS measurement. Au Schottky contact and Al ohmic contact were made on the SiC surface. DLTS peaks appeared near 160K and 260K. For the shallower level, the activation energy E_A is 0.34eV and the capture cross section at infinite temperature, δ_∞, is 6.0x10^<-17>cm^2. For the deeper level, E_A is 0.52eV and δ_∞ is 9.5x10<-18>cm^2. The capture cross section at the peak temperature was obtained by changing the injection pulse width, and it was found that the energy barrier of electron capture is negligible for these two traps. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3C-SiC / DLTS / electron trap / capture cross section / activation energy / energy barrier of electron capture |
| Paper # | ED97-13,CPM97-1 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1997/5/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of the capture cross section and the energy level of electron traps in 3C-SiC using the DLTS measurement |
| Sub Title (in English) | |
| Keyword(1) | 3C-SiC |
| Keyword(2) | DLTS |
| Keyword(3) | electron trap |
| Keyword(4) | capture cross section |
| Keyword(5) | activation energy |
| Keyword(6) | energy barrier of electron capture |
| 1st Author's Name | Y. Koga |
| 1st Author's Affiliation | Nagoya Inst. Tech() |
| 2nd Author's Name | T. Abe |
| 2nd Author's Affiliation | Nagoya Inst. Tech |
| 3rd Author's Name | N. Yamada |
| 3rd Author's Affiliation | Toyota Central Lab. |
| 4th Author's Name | M. Ichimura |
| 4th Author's Affiliation | Nagoya Inst. Tech |
| 5th Author's Name | Y. Tokuda |
| 5th Author's Affiliation | Aichi Inst. Tech |
| 6th Author's Name | E. Arai |
| 6th Author's Affiliation | Nagoya Inst. Tech |
| Date | 1997/5/22 |
| Paper # | ED97-13,CPM97-1 |
| Volume (vol) | vol.97 |
| Number (no) | 60 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |