Presentation 1995/12/21
L-Band SPDT Switch using Si-MOSFET
Yoshitada IYAMA, Noriharu SUEMATSU, Tomonori SHIGEMATSU, Takao MORIWAKI, Tatsuhiko IKEDA,
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Abstract(in English) A novel simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been presented. In order to evaluate the relationship, depletion type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal s-parameters of the FETs. The measured switch characteristics are fairly good agreement with the calculated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.
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Keyword(in English) Switch / Microwave / Si / MOSFET / Communication
Paper # SAT95-82,MW95-124
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Committee SAT
Conference Date 1995/12/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) L-Band SPDT Switch using Si-MOSFET
Sub Title (in English)
Keyword(1) Switch
Keyword(2) Microwave
Keyword(3) Si
Keyword(4) MOSFET
Keyword(5) Communication
1st Author's Name Yoshitada IYAMA
1st Author's Affiliation Mitsubishi Electric Corp.()
2nd Author's Name Noriharu SUEMATSU
2nd Author's Affiliation Mitsubishi Electric Corp.
3rd Author's Name Tomonori SHIGEMATSU
3rd Author's Affiliation Mitsubishi Electric Corp.
4th Author's Name Takao MORIWAKI
4th Author's Affiliation Mitsubishi Electric Corp.
5th Author's Name Tatsuhiko IKEDA
5th Author's Affiliation Mitsubishi Electric Corp.
Date 1995/12/21
Paper # SAT95-82,MW95-124
Volume (vol) vol.95
Number (no) 443
Page pp.pp.-
#Pages 6
Date of Issue