Presentation 1994/10/21
Study on linearity of high frequency power MOSFET amplifier
Mineo Katsueda, Isao Yoshida, Kenji Sekine,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) UHF power MOSFET amplifiers for mobile communication have been developed,which show good lineality on π, 4 shift OPSK digital mod ulated signal.Calculated 5th intermodulation distortion is found to agree well with the measured adjacent channnel leakage power. Analysis shows good linearity mainly comes from the negative feed back effect of the intrinsic source resistance of power MOSFET.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) amplifier / power MOSFET / π/ shift QPSK / intermodulation / polynomial approximation / negative feedback
Paper # EMCJ94-47,MW94-71
Date of Issue

Conference Information
Committee EMCJ
Conference Date 1994/10/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electromagnetic Compatibility (EMCJ)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on linearity of high frequency power MOSFET amplifier
Sub Title (in English)
Keyword(1) amplifier
Keyword(2) power MOSFET
Keyword(3) π/ shift QPSK
Keyword(4) intermodulation
Keyword(5) polynomial approximation
Keyword(6) negative feedback
1st Author's Name Mineo Katsueda
1st Author's Affiliation Central Research Laboratory,Hitachi Ltd.()
2nd Author's Name Isao Yoshida
2nd Author's Affiliation Central Research Laboratory,Hitachi Ltd.
3rd Author's Name Kenji Sekine
3rd Author's Affiliation Central Research Laboratory,Hitachi Ltd.
Date 1994/10/21
Paper # EMCJ94-47,MW94-71
Volume (vol) vol.94
Number (no) 302
Page pp.pp.-
#Pages 5
Date of Issue