Presentation 1994/10/21
A noise measurement of static induction transistor for low power communication (part3) : A measurement of low frequency noise
Keiichi Itoh, Hiroshi Inoue,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A measurement of noise in the range of 300Hz to 1MHz of static induction transistor for low power communication is reported. Results of a measurement indicate as follows:(1)Dependancy on drain current is observed in flat noise region,but not observed in 1, f noise region.(2)The larger the product of the source length by the source number,the higher crossover frequency shift.It is considered flat noise is dominantly influenced by the thermal noise in the channel,but 1/f noise might have another noise source which is little infuenced by the thermal noise in the channel.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SIT / 1/ noise / flat noise / crossover frequency
Paper # EMCJ94-43,MW94-67
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Committee EMCJ
Conference Date 1994/10/21(1days)
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Registration To Electromagnetic Compatibility (EMCJ)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A noise measurement of static induction transistor for low power communication (part3) : A measurement of low frequency noise
Sub Title (in English)
Keyword(1) SIT
Keyword(2) 1/ noise
Keyword(3) flat noise
Keyword(4) crossover frequency
1st Author's Name Keiichi Itoh
1st Author's Affiliation Department of Electric and Electronic Engineering,Mining College, Akita University()
2nd Author's Name Hiroshi Inoue
2nd Author's Affiliation Department of Electric and Electronic Engineering,Mining College, Akita University
Date 1994/10/21
Paper # EMCJ94-43,MW94-67
Volume (vol) vol.94
Number (no) 302
Page pp.pp.-
#Pages 6
Date of Issue