Presentation | 1995/12/15 Deterioration of a Integrated Circuit by the Voltage Surge Hiroki KOKUBO, Nobuo MUROTA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The immunity of a CMOS IC against electrostatic discharges and a lightning surge is studied. We have measured the breakdown voltage of the IC in electrostatic discharges by using a machine model (MM), a human body model (HBM) and a charged device model (CDM). The breakdown voltage of MM is 0.9kV, and that of HBM is 8kV. When using CDM, the IC isn't deteriorated by 4kV discharge which is the withstand voltage of our CDM. An IC is easily broken by a lightning surge, and the breakdown voltage of the CMOS IC is about 50V. Moreover we found that the iteration of electrostatic discharges below the breakdown voltage breaks the IC. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | IC deterioration / breakdown voltage / electrostatic discharge / lightning surge |
Paper # | EMCJ95-73 |
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Conference Information | |
Committee | EMCJ |
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Conference Date | 1995/12/15(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electromagnetic Compatibility (EMCJ) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Deterioration of a Integrated Circuit by the Voltage Surge |
Sub Title (in English) | |
Keyword(1) | IC deterioration |
Keyword(2) | breakdown voltage |
Keyword(3) | electrostatic discharge |
Keyword(4) | lightning surge |
1st Author's Name | Hiroki KOKUBO |
1st Author's Affiliation | Industrial Research Institute, Aichi Prefectural Government() |
2nd Author's Name | Nobuo MUROTA |
2nd Author's Affiliation | Industrial Research Institute, Aichi Prefectural Government |
Date | 1995/12/15 |
Paper # | EMCJ95-73 |
Volume (vol) | vol.95 |
Number (no) | 438 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |