Presentation 1997/12/12
LSI Failure Analysis Technology using Cross-sectional TEM Technique
Shinji Nakamura, Takemi Ueki, Yukio Komine, Tadao Takeda,
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Abstract(in English) A powerful specimen-preparation technique for cross-sectional TEM in LSI failure analysis has been developed. This technique consists of (a) a low damage grinding method to groove with little chipping, (b) a highly accurate alignment method for FIB fabrication with simultaneous SEM observation and a simulation tool to indicate the specified cross-sectional image, and (c) a determination method of three-dimensional coordinates of defects in thick specimens using the ultra high voltage TEM. The efficiency of this technique is demonstrated by applying it to failure analysis of 0.25-μm CMOS devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LSI Failure analysis / Microstructure analysis / X-TEM / FIB / SEM
Paper # R97-28
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Conference Date 1997/12/12(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) LSI Failure Analysis Technology using Cross-sectional TEM Technique
Sub Title (in English)
Keyword(1) LSI Failure analysis
Keyword(2) Microstructure analysis
Keyword(3) X-TEM
Keyword(4) FIB
Keyword(5) SEM
1st Author's Name Shinji Nakamura
1st Author's Affiliation NTT System Electronics Laboratories()
2nd Author's Name Takemi Ueki
2nd Author's Affiliation NTT Electronics
3rd Author's Name Yukio Komine
3rd Author's Affiliation NTT System Electronics Laboratories
4th Author's Name Tadao Takeda
4th Author's Affiliation NTT System Electronics Laboratories
Date 1997/12/12
Paper # R97-28
Volume (vol) vol.97
Number (no) 443
Page pp.pp.-
#Pages 6
Date of Issue