Presentation 1996/12/13
Evaluation of the Stability of the Au Interconnection Buried in the Polyimide Layer
Hirohiko Sugahara, Masakatsu Kimizuka, Yoshino Fukai, Makoto Hirano, Kiyoshi Ogawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The stability of the electrical characteristics of the three-dimensional interconnection composed of the Au/WSiN metal layers and the polyimide insulator layers is studied. Temperature cycle tests for the contact chains and high-temperature bias stress tests for the Au interconnection and for GaAs MESFETs covered with polyimide layer are carried out to confirm whether new degradation phenomena are observed or not for this system. The increase in the contact resistance at the through-hole contact due to the thermal expansion coefficient difference between the polyimide and the metal is not observed. There is no polyimide leakage current increase caused by water. Stable electrical characteristics of the Au interconnection and MESFETs buried in the polyimide layer exhibit fairly high stability of this system.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) interconnection / gold / polyimide / reliability
Paper # R96-32
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Committee R
Conference Date 1996/12/13(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of the Stability of the Au Interconnection Buried in the Polyimide Layer
Sub Title (in English)
Keyword(1) interconnection
Keyword(2) gold
Keyword(3) polyimide
Keyword(4) reliability
1st Author's Name Hirohiko Sugahara
1st Author's Affiliation NTT System Electronics Laboratories()
2nd Author's Name Masakatsu Kimizuka
2nd Author's Affiliation NTT System Electronics Laboratories
3rd Author's Name Yoshino Fukai
3rd Author's Affiliation NTT System Electronics Laboratories
4th Author's Name Makoto Hirano
4th Author's Affiliation NTT System Electronics Laboratories
5th Author's Name Kiyoshi Ogawa
5th Author's Affiliation NTT Electronics Technology
Date 1996/12/13
Paper # R96-32
Volume (vol) vol.96
Number (no) 423
Page pp.pp.-
#Pages 5
Date of Issue