Presentation 2001/9/21
Thin-film Deposition of Wurtzite-type Materials on Metal Surfaces
Yuichi Sato, Susumu Sato,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Metal foils are expected as substrates for thin film depositions of the wurtzite-type materials to realize novel giant microelectronic devices. Thin films of gallium nitride(GaN), which is one of the wurtzite-type materials and has semiconducting properties, are tried to grow on several kinds of metal foils and their crystallinity is investigated. The crystallinity of GaN thin films is quite poor when they are directly grown on the metal foil surfaces, while highly c-axis oriented GaN thin films are easily obtained on quartz glass substrates at same growth condition. The crystallinity of GaN thin films grown on the metal foil is drastically improved by inserting silicon dioxide(SiO_2) intermediate layers of adequate thickness. On the other hand, aluminum nitride(AlN) and GaN intermediate layers prepared in this work are not effective for the improvements. Causes of the differences and their improvement mechanisms are discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) wurtzite structure / GaN / metal foil / intermediate layer / SiO_2 / reactive evaporation
Paper # EMD2001-62
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Conference Information
Committee EMD
Conference Date 2001/9/21(1days)
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Registration To Electromechanical Devices (EMD)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thin-film Deposition of Wurtzite-type Materials on Metal Surfaces
Sub Title (in English)
Keyword(1) wurtzite structure
Keyword(2) GaN
Keyword(3) metal foil
Keyword(4) intermediate layer
Keyword(5) SiO_2
Keyword(6) reactive evaporation
1st Author's Name Yuichi Sato
1st Author's Affiliation Dept.of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University()
2nd Author's Name Susumu Sato
2nd Author's Affiliation Dept.of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
Date 2001/9/21
Paper # EMD2001-62
Volume (vol) vol.101
Number (no) 327
Page pp.pp.-
#Pages 6
Date of Issue