Presentation | 2001/9/21 Thin-film Deposition of Wurtzite-type Materials on Metal Surfaces Yuichi Sato, Susumu Sato, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Metal foils are expected as substrates for thin film depositions of the wurtzite-type materials to realize novel giant microelectronic devices. Thin films of gallium nitride(GaN), which is one of the wurtzite-type materials and has semiconducting properties, are tried to grow on several kinds of metal foils and their crystallinity is investigated. The crystallinity of GaN thin films is quite poor when they are directly grown on the metal foil surfaces, while highly c-axis oriented GaN thin films are easily obtained on quartz glass substrates at same growth condition. The crystallinity of GaN thin films grown on the metal foil is drastically improved by inserting silicon dioxide(SiO_2) intermediate layers of adequate thickness. On the other hand, aluminum nitride(AlN) and GaN intermediate layers prepared in this work are not effective for the improvements. Causes of the differences and their improvement mechanisms are discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | wurtzite structure / GaN / metal foil / intermediate layer / SiO_2 / reactive evaporation |
Paper # | EMD2001-62 |
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Committee | EMD |
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Conference Date | 2001/9/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electromechanical Devices (EMD) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Thin-film Deposition of Wurtzite-type Materials on Metal Surfaces |
Sub Title (in English) | |
Keyword(1) | wurtzite structure |
Keyword(2) | GaN |
Keyword(3) | metal foil |
Keyword(4) | intermediate layer |
Keyword(5) | SiO_2 |
Keyword(6) | reactive evaporation |
1st Author's Name | Yuichi Sato |
1st Author's Affiliation | Dept.of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University() |
2nd Author's Name | Susumu Sato |
2nd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University |
Date | 2001/9/21 |
Paper # | EMD2001-62 |
Volume (vol) | vol.101 |
Number (no) | 327 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |