Presentation 2000/12/8
Development of High Density Build-up Substrate by Via Filling
Takashi Nakamura, Tetsuro Hamada, Toshikazu Okubo, Toshiaki Ishii,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The build-up method is suitable for making semiconductor substrates because high density patterns can be made. Higher density build-up substrates can be made by using the via filling method. The crystal orientation of the plated copper film from the bath for via filling is different from that from the conventional orcinary bath. However, filled via has the same electrical properties as ordinary conformable via.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Build-up / Via filling / Crystal orientation / Electrical property
Paper # EMD2000-76
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Conference Information
Committee EMD
Conference Date 2000/12/8(1days)
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Paper Information
Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of High Density Build-up Substrate by Via Filling
Sub Title (in English)
Keyword(1) Build-up
Keyword(2) Via filling
Keyword(3) Crystal orientation
Keyword(4) Electrical property
1st Author's Name Takashi Nakamura
1st Author's Affiliation Toppan Printing Co., Ltd., Electronics Research Laboratory()
2nd Author's Name Tetsuro Hamada
2nd Author's Affiliation Toppan Printing Co., Ltd., Electronics Research Laboratory
3rd Author's Name Toshikazu Okubo
3rd Author's Affiliation Toppan Printing Co., Ltd., Electronics Research Laboratory
4th Author's Name Toshiaki Ishii
4th Author's Affiliation Toppan Printing Co., Ltd., Electronics Research Laboratory
Date 2000/12/8
Paper # EMD2000-76
Volume (vol) vol.100
Number (no) 511
Page pp.pp.-
#Pages 4
Date of Issue