Presentation 1998/7/3
Measurement of thermal conductivity of Si ion-implanted GaAs using photoacoustic technique
Nobuya TAKABATAKE, Takeshi KOBAYASHI, Syuji KAWAHATA, Tomio IZUMI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A photoacoustic method is proposed to measure the thermal conductivity of semiconducting thin films.The method is applied to a disordered layer in GaAs produced by Si ion implantation and annealing behavior of the thermal conductivity of the layer is measured.The thermal conductivity is recovered rapidly at an annealing temperature above 500 ℃ and is reached to 55Wm^<-1>K^<-1>, the value of GaAs at 800℃
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Thermal conductivity / Thin film / Photoacoustic technique / PAS
Paper # US98-30,EMD98-22,CPM98-54,OME98-52
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Committee EMD
Conference Date 1998/7/3(1days)
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Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Measurement of thermal conductivity of Si ion-implanted GaAs using photoacoustic technique
Sub Title (in English)
Keyword(1) Thermal conductivity
Keyword(2) Thin film
Keyword(3) Photoacoustic technique
Keyword(4) PAS
1st Author's Name Nobuya TAKABATAKE
1st Author's Affiliation Dept.Electrical and Electronic Eng., KANAGAWA Institute of Technology()
2nd Author's Name Takeshi KOBAYASHI
2nd Author's Affiliation Dept.Electrical and Electronic Eng., KANAGAWA Institute of Technology
3rd Author's Name Syuji KAWAHATA
3rd Author's Affiliation Dept.Electronic Eng., TOKAI Uni.
4th Author's Name Tomio IZUMI
4th Author's Affiliation Dept.Electronic Eng., TOKAI Uni.
Date 1998/7/3
Paper # US98-30,EMD98-22,CPM98-54,OME98-52
Volume (vol) vol.98
Number (no) 162
Page pp.pp.-
#Pages 5
Date of Issue