Presentation 1996/12/20
A Measurement of Low Frequency Noise of Static Induction Transistors at Low Temperature
Hiroshi INOUE, Yasuo MORINAGA, Keiichi ITOH,
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Abstract(in English) Low frequency noise in the range of 100Hz to 3MHz of static induction transistors is measured. It is compared results of measurement at low temperature (liquid nitrogen's boiling point : 77[K]) and room temperature (293[K]). At low temperature, a channel resistance in the source side r_s, which is principal noise component of flat noise, is decreased. However, the resistance components except r_s is increased. Therefore, the dependancy on r_s in flat noise at low temperature is lower than at room temperature. The slope of 1/f noise becomes steeper, then crossover frequency shifts to lower frequency.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SIT / Low Temperature / 1/f Noise / Flat noise / Channel resistance in the source side
Paper # EMD96-86
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Committee EMD
Conference Date 1996/12/20(1days)
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Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Measurement of Low Frequency Noise of Static Induction Transistors at Low Temperature
Sub Title (in English)
Keyword(1) SIT
Keyword(2) Low Temperature
Keyword(3) 1/f Noise
Keyword(4) Flat noise
Keyword(5) Channel resistance in the source side
1st Author's Name Hiroshi INOUE
1st Author's Affiliation Department of Electrical and Electronic Engineering, Mining College, Akita University()
2nd Author's Name Yasuo MORINAGA
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Mining College, Akita University
3rd Author's Name Keiichi ITOH
3rd Author's Affiliation Department of Electrical Engineering, Akita National College of Technology
Date 1996/12/20
Paper # EMD96-86
Volume (vol) vol.96
Number (no) 438
Page pp.pp.-
#Pages 6
Date of Issue