Presentation 1997/4/18
Room temperature silicon wafer direct bonding and its applicability to micro bonding
Hideki Takagi, Ryutaro Maeda, Tadatomo Suga,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed a new method for the direct bonding of silicon wafers at room temperature. In the method Ar beam etching is used to modify the surface of the specimens, and they are bonded in vacuum. The bonding prepared by the method is as strong as conventional wafer fusion bonding. Pressing load is not necessary when two specimens are mated. Also, this method does not need ultrahigh vacuum condition. Especially, the influence of inert gas in the vacuum chamber is quite small. Even in the 1000Pa of Ar, strong bonding can be attained. This method can be applied to the small area bonding of 100μm wide lines. These results demonstrate the advantages of this method in assembling and packaging of MEMS.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Room temperature bonding / Direct bonding / Silicon wafer / Ar beam etching / Micro bonding
Paper # EMD97-5
Date of Issue

Conference Information
Committee EMD
Conference Date 1997/4/18(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Room temperature silicon wafer direct bonding and its applicability to micro bonding
Sub Title (in English)
Keyword(1) Room temperature bonding
Keyword(2) Direct bonding
Keyword(3) Silicon wafer
Keyword(4) Ar beam etching
Keyword(5) Micro bonding
1st Author's Name Hideki Takagi
1st Author's Affiliation Mechanical Engineering Laboratory, AIST. MITI.()
2nd Author's Name Ryutaro Maeda
2nd Author's Affiliation Mechanical Engineering Laboratory, AIST. MITI.
3rd Author's Name Tadatomo Suga
3rd Author's Affiliation Research Center for Advanced Science and Technology, Univ. Tokyo
Date 1997/4/18
Paper # EMD97-5
Volume (vol) vol.97
Number (no) 12
Page pp.pp.-
#Pages 5
Date of Issue