Presentation	2002/1/10 Analysis of Extrinsic Base Structure Using Selective-Epitaxial-Growth in Self-Aligned SiGe HBT Eiji Ohue, Kastuya Oda, Reiko Hayami, Kastuyoshi Washio, Hiromi Shimamoto,
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Abstract(in English)	An ultra-high-speed SiGe HBT, using a fabrication process of a self-aligned structure and a selective-epitaxial-growth (SEG) SiGe-base technology, is essential for high-speed communication systems. In this work, we analyzed relationship between a width of SEG SiGe-base (W_) and performances of SiGe HBT. We achieved ECL-gate delay of 5.3 ps and an operating frequency by a static frequency divider of 71 GHz by a self-aligned HBT with optimizing a width of SEG SiGe-base.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	SiGe HBT / SEG / self-aligned structure / ECL-gate delay / static frequency divider
Paper #	2001-ED-208,2001-MW-163,2001-ICD-205
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Committee	MW
Conference Date	2002/1/10(1days)
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Registration To	Microwaves (MW)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Analysis of Extrinsic Base Structure Using Selective-Epitaxial-Growth in Self-Aligned SiGe HBT
Sub Title (in English)
Keyword(1)	SiGe HBT
Keyword(2)	SEG
Keyword(3)	self-aligned structure
Keyword(4)	ECL-gate delay
Keyword(5)	static frequency divider
1st Author's Name	Eiji Ohue
1st Author's Affiliation	Hitachi, Ltd., Central Research Laboratory()
2nd Author's Name	Kastuya Oda
2nd Author's Affiliation	Hitachi, Ltd., Central Research Laboratory
3rd Author's Name	Reiko Hayami
3rd Author's Affiliation	Hitachi, Ltd., Central Research Laboratory
4th Author's Name	Kastuyoshi Washio
4th Author's Affiliation	Hitachi, Ltd., Central Research Laboratory
5th Author's Name	Hiromi Shimamoto
5th Author's Affiliation	Hitachi Device Engineering
Date	2002/1/10
Paper #	2001-ED-208,2001-MW-163,2001-ICD-205
Volume (vol)	vol.101
Number (no)	553
Page	pp.pp.-
#Pages	6
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