| Presentation | 2002/1/9 Effect of Gate-Recess Structure on the High Frequency Performance of Ultra-Fast InP-Based HEMTs : Asymmetric Gate-Recess Fabrication and Characterization Keisuke SHINOHARA, Toshiaki MATSUI, Yoshimi YAMASHITA, Akira ENDOH, Kohki HIKOSAKA, Takashi MIMURA, Satoshi HIYAMIZU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) are the fastest transistors at present and key devices for the future millimeter-wave and optical communications. In this paper, a self-aligned asymmetric gate-recess structure for the ultra-fast InGaAs/InAlAs HEMTs is developed in order to investigate the effect of the gate-recess structure on their high frequency performances. A 60-nm-gate HEMT with a longer drain-side recess length (Lrd) exhibits a much-improved maximum oscillation frequency (fmax) of 503 GHz compared to that (281GHz) with a symmetric recess structure mainly due to a decrease in a drain conductance (gd) and a gate-drain capacitance (Cgd). This result indicates that the longer Lrd results in a longer depletion area at the drain end of the gate and then alleviate electric field between gate and drain. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP-HEMT / Asymmetric gate-recess / Cutoff frequency / ft / Maximum oscillation frequcency / fmax |
| Paper # | 2001-ED-195,2001-MW-150,2001-ICD-192 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2002/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Gate-Recess Structure on the High Frequency Performance of Ultra-Fast InP-Based HEMTs : Asymmetric Gate-Recess Fabrication and Characterization |
| Sub Title (in English) | |
| Keyword(1) | InP-HEMT |
| Keyword(2) | Asymmetric gate-recess |
| Keyword(3) | Cutoff frequency |
| Keyword(4) | ft |
| Keyword(5) | Maximum oscillation frequcency |
| Keyword(6) | fmax |
| 1st Author's Name | Keisuke SHINOHARA |
| 1st Author's Affiliation | Communications Research Laboratory() |
| 2nd Author's Name | Toshiaki MATSUI |
| 2nd Author's Affiliation | Communications Research Laboratory |
| 3rd Author's Name | Yoshimi YAMASHITA |
| 3rd Author's Affiliation | Fujitsu Limited |
| 4th Author's Name | Akira ENDOH |
| 4th Author's Affiliation | Fujitsu Limited |
| 5th Author's Name | Kohki HIKOSAKA |
| 5th Author's Affiliation | Fujitsu Limited |
| 6th Author's Name | Takashi MIMURA |
| 6th Author's Affiliation | Fujitsu Limited |
| 7th Author's Name | Satoshi HIYAMIZU |
| 7th Author's Affiliation | Graduate School of Engineering Science, Osaka University |
| Date | 2002/1/9 |
| Paper # | 2001-ED-195,2001-MW-150,2001-ICD-192 |
| Volume (vol) | vol.101 |
| Number (no) | 552 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |