Presentation 2002/1/9
InGaP Channel Field-Modulating Plate FET under High Voltage Operation
Akio Wakejima, Kazuki Ota, Kohji Matsunaga, Masaaki Kuzuhara,
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Abstract(in English) This paper describes high power density and low distortion characteristics of an InGaP channel field-modulating plate (FP-) MESFET (InGap FP-MESFET) under high voltage operation. The developed FP-MESFET exhibited and extremely high breakdown voltage of 100 V and delivered and output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias (Vd) of 55 V. A 3rd-order intermodulation distortion (IM3) of -31 dBc was also achieved at an 8 dB back-off point from saturation power. These results show the developed FET is suited for applications in a cellular base station.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGap / Field-Modulating Plate / FET / break-down voltage / distortion
Paper # 2001-ED-188,2001-MW-143,2001-ICD-185
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Committee MW
Conference Date 2002/1/9(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) InGaP Channel Field-Modulating Plate FET under High Voltage Operation
Sub Title (in English)
Keyword(1) InGap
Keyword(2) Field-Modulating Plate
Keyword(3) FET
Keyword(4) break-down voltage
Keyword(5) distortion
1st Author's Name Akio Wakejima
1st Author's Affiliation Photonic and Wireless Research Laboratories, NEC Corporation()
2nd Author's Name Kazuki Ota
2nd Author's Affiliation Photonic and Wireless Research Laboratories, NEC Corporation
3rd Author's Name Kohji Matsunaga
3rd Author's Affiliation Photonic and Wireless Research Laboratories, NEC Corporation
4th Author's Name Masaaki Kuzuhara
4th Author's Affiliation Photonic and Wireless Research Laboratories, NEC Corporation
Date 2002/1/9
Paper # 2001-ED-188,2001-MW-143,2001-ICD-185
Volume (vol) vol.101
Number (no) 552
Page pp.pp.-
#Pages 6
Date of Issue