Presentation 2001/10/19
A6-18GHzSPDT MIC PIN Switch with 1/4λ line bias circuit
Yukinobu TARUI, Hajime KAWANO, Kazuyoshi INAMI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is difficult to obtain both high power and broad band characteristics for microwave switches, and in the case of using PIN diodes for switches there is a problem that bias circuit would increase device size. In this report, SPDT PIN switch configuration using shunt PIN diode for high power characteristic and 1/4λbias stub for broad band characteristic and small size, will be proposed. MIC switch results employing this configuration will also be shown using discrete PIN diodes and Al203 substrate, demostrating insertion loss. 0.9 to 2.3 dB, isolation: 20dB, Input power: 41dBm with excellent linearity, size: 2.1×5.8mm for 6 to 18GHz band.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SPDT SWITCH / PIN DIODE / BROAD BAND / HIGH POWER
Paper # EMCJ2001-69, MW2001-87
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Committee MW
Conference Date 2001/10/19(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A6-18GHzSPDT MIC PIN Switch with 1/4λ line bias circuit
Sub Title (in English)
Keyword(1) SPDT SWITCH
Keyword(2) PIN DIODE
Keyword(3) BROAD BAND
Keyword(4) HIGH POWER
1st Author's Name Yukinobu TARUI
1st Author's Affiliation Mitsubishi Elec.Kamakura Works()
2nd Author's Name Hajime KAWANO
2nd Author's Affiliation Mitsubishi Elec.Kamakura Works
3rd Author's Name Kazuyoshi INAMI
3rd Author's Affiliation Mitsubishi Elec.Kamakura Works
Date 2001/10/19
Paper # EMCJ2001-69, MW2001-87
Volume (vol) vol.101
Number (no) 393
Page pp.pp.-
#Pages 5
Date of Issue