Presentation | 2001/10/19 A6-18GHzSPDT MIC PIN Switch with 1/4λ line bias circuit Yukinobu TARUI, Hajime KAWANO, Kazuyoshi INAMI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It is difficult to obtain both high power and broad band characteristics for microwave switches, and in the case of using PIN diodes for switches there is a problem that bias circuit would increase device size. In this report, SPDT PIN switch configuration using shunt PIN diode for high power characteristic and 1/4λbias stub for broad band characteristic and small size, will be proposed. MIC switch results employing this configuration will also be shown using discrete PIN diodes and Al203 substrate, demostrating insertion loss. 0.9 to 2.3 dB, isolation: 20dB, Input power: 41dBm with excellent linearity, size: 2.1×5.8mm for 6 to 18GHz band. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SPDT SWITCH / PIN DIODE / BROAD BAND / HIGH POWER |
Paper # | EMCJ2001-69, MW2001-87 |
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Conference Information | |
Committee | MW |
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Conference Date | 2001/10/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Microwaves (MW) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A6-18GHzSPDT MIC PIN Switch with 1/4λ line bias circuit |
Sub Title (in English) | |
Keyword(1) | SPDT SWITCH |
Keyword(2) | PIN DIODE |
Keyword(3) | BROAD BAND |
Keyword(4) | HIGH POWER |
1st Author's Name | Yukinobu TARUI |
1st Author's Affiliation | Mitsubishi Elec.Kamakura Works() |
2nd Author's Name | Hajime KAWANO |
2nd Author's Affiliation | Mitsubishi Elec.Kamakura Works |
3rd Author's Name | Kazuyoshi INAMI |
3rd Author's Affiliation | Mitsubishi Elec.Kamakura Works |
Date | 2001/10/19 |
Paper # | EMCJ2001-69, MW2001-87 |
Volume (vol) | vol.101 |
Number (no) | 393 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |