Presentation 2001/1/12
Comparison and Consideration of the Measurement and Theory of the Illuminated MESFET
Tatsuo Kuwayama, Jun Kobayashi, M.A. Alsunaidi, Shigeo Kawasaki,
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Abstract(in English) In this report, measurement data from non-illuminated and illuminated MESFETs were compared with theoretical data from the Drift-Diffusion model. For the investigation of agreement between analysis of the Drift-diffusion model and the measurement, Cold FET measurement was carried out. As the result, parameters from parasitic elements were defined. Then, the parameters for the inside of the MESFET chips were extracted. From comparison between the Drift-Diffusion model and the data from the measurement, influence due to illumination on the parasitic elements was found to be less significant, and the Drift-Diffusion model is useful for the analysis of non-illuminated and illuminated MESFETs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Illuminated MESFET / Drift-Diffusion Model / FDTD Method / Cold FET
Paper # ED2000-240,MW2000-189,ICD2000-200
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Conference Date 2001/1/12(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Comparison and Consideration of the Measurement and Theory of the Illuminated MESFET
Sub Title (in English)
Keyword(1) Illuminated MESFET
Keyword(2) Drift-Diffusion Model
Keyword(3) FDTD Method
Keyword(4) Cold FET
1st Author's Name Tatsuo Kuwayama
1st Author's Affiliation Department of Communication Engineering, Tokai University()
2nd Author's Name Jun Kobayashi
2nd Author's Affiliation Department of Communication Engineering, Tokai University
3rd Author's Name M.A. Alsunaidi
3rd Author's Affiliation Department of Electrical Engineering King Fahd University of Petroleum and Minerals
4th Author's Name Shigeo Kawasaki
4th Author's Affiliation Department of Communication Engineering, Tokai University
Date 2001/1/12
Paper # ED2000-240,MW2000-189,ICD2000-200
Volume (vol) vol.100
Number (no) 552
Page pp.pp.-
#Pages 6
Date of Issue