Presentation 2001/1/12
X-band MMIC Power Amplifier with an On-chip Temperature Compensation Circuit
Kazuhisa Yamauchi, Masahiro Tamaki, Mamiko Yamaguchi, Yukio Ikeda, Tadashi Takagi,
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Abstract(in English) An X-band MMIC power amplifier with an on-chip temperature compensation circuit is presented. The temperature compensation circuit is composed of a diode and a resistor. The compensation circuit utilizes the temperature characteristics of the diode. The compensation circuit is applied to 4 stage X-band MMIC power amplifier with a small gain of 32dB at +25℃, The gain variation is improved from 5.5dB to 1.3dB in the temperature range between -10℃ and +80℃ with the presented circuit. The compensation circuit is suitable to compensate gain variation of a microwave power amplifier within wide temperature range.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Microwave / Amplifier / MMIC / Temperature / Diode
Paper # ED2000-239,MW2000-188,ICD2000-199
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Committee MW
Conference Date 2001/1/12(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) X-band MMIC Power Amplifier with an On-chip Temperature Compensation Circuit
Sub Title (in English)
Keyword(1) Microwave
Keyword(2) Amplifier
Keyword(3) MMIC
Keyword(4) Temperature
Keyword(5) Diode
1st Author's Name Kazuhisa Yamauchi
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name Masahiro Tamaki
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Mamiko Yamaguchi
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Yukio Ikeda
4th Author's Affiliation Mitsubishi Electric Corporation
5th Author's Name Tadashi Takagi
5th Author's Affiliation Mitsubishi Electric Corporation
Date 2001/1/12
Paper # ED2000-239,MW2000-188,ICD2000-199
Volume (vol) vol.100
Number (no) 552
Page pp.pp.-
#Pages 5
Date of Issue