Presentation	2000/10/12 1/f Noise Measurement of HF Band SIT Keiichi ITOH, Hiroshi INOUE,
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Abstract(in English)	In thisi report, the noise property is measured on HF band SIT(Static Induction Transistor)in the frequency range of 10 Hz to 10 MHz, and the bias dependency on the 1/f noise is examined. As a result, both drain current and gate bias dependencies are observed. In particular, when the channel of SIT is not depleted completely, it is supposed that the 1/f noise is strongly affected by the gate bias. When the channel is pinched off, the magnitude of 1/f noise A at 1Hz is related to the drain current I_D, which A is proportional to I_D^<0.10>. It is considered that the current dependency of the 1/f noise is weak, comparing to another kind of semiconconductor devices.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	SIT / 1/f Noise / Drain current dependency / Gate bias dependency
Paper #	EMCJ2000-76,MW2000-120
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Conference Information
Committee	MW
Conference Date	2000/10/12(1days)
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Paper Information
Registration To	Microwaves (MW)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	1/f Noise Measurement of HF Band SIT
Sub Title (in English)
Keyword(1)	SIT
Keyword(2)	1/f Noise
Keyword(3)	Drain current dependency
Keyword(4)	Gate bias dependency
1st Author's Name	Keiichi ITOH
1st Author's Affiliation	Department of Electrical Engineering, Akita National College of Technology()
2nd Author's Name	Hiroshi INOUE
2nd Author's Affiliation	Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
Date	2000/10/12
Paper #	EMCJ2000-76,MW2000-120
Volume (vol)	vol.100
Number (no)	365
Page	pp.pp.-
#Pages	6
Date of Issue