Presentation | 2000/9/15 An Improved Physical Model for the Analysis of High Frequency Active Devices M.A. Alsunaidi, S. Kawasaki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This report describes an improved time-domain simulation model for high frequency active devices using the FDTD method. The model is based on the Boltzmann's transport equation to describe the physical transport of the carriers. A 2D structure of a MESFET including the air part above the device is considered. It is shown that the inclusion of the fringing fields above the device enhances the accuracy of the simulation. The analysis includes I-V curves as well as device gain at a wide frequency range. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAs MESFETs / Boltzmann's transport equation / FDTD method / Physical modeling |
Paper # | ED2000-155,MW2000-108 |
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Conference Information | |
Committee | MW |
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Conference Date | 2000/9/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Microwaves (MW) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An Improved Physical Model for the Analysis of High Frequency Active Devices |
Sub Title (in English) | |
Keyword(1) | GaAs MESFETs |
Keyword(2) | Boltzmann's transport equation |
Keyword(3) | FDTD method |
Keyword(4) | Physical modeling |
1st Author's Name | M.A. Alsunaidi |
1st Author's Affiliation | Department of Communications Engineering Tokai University() |
2nd Author's Name | S. Kawasaki |
2nd Author's Affiliation | Department of Communications Engineering Tokai University |
Date | 2000/9/15 |
Paper # | ED2000-155,MW2000-108 |
Volume (vol) | vol.100 |
Number (no) | 308 |
Page | pp.pp.- |
#Pages | 5 |
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