Presentation 2000/9/15
An Improved Physical Model for the Analysis of High Frequency Active Devices
M.A. Alsunaidi, S. Kawasaki,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) This report describes an improved time-domain simulation model for high frequency active devices using the FDTD method. The model is based on the Boltzmann's transport equation to describe the physical transport of the carriers. A 2D structure of a MESFET including the air part above the device is considered. It is shown that the inclusion of the fringing fields above the device enhances the accuracy of the simulation. The analysis includes I-V curves as well as device gain at a wide frequency range.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs MESFETs / Boltzmann's transport equation / FDTD method / Physical modeling
Paper # ED2000-155,MW2000-108
Date of Issue

Conference Information
Committee MW
Conference Date 2000/9/15(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Microwaves (MW)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An Improved Physical Model for the Analysis of High Frequency Active Devices
Sub Title (in English)
Keyword(1) GaAs MESFETs
Keyword(2) Boltzmann's transport equation
Keyword(3) FDTD method
Keyword(4) Physical modeling
1st Author's Name M.A. Alsunaidi
1st Author's Affiliation Department of Communications Engineering Tokai University()
2nd Author's Name S. Kawasaki
2nd Author's Affiliation Department of Communications Engineering Tokai University
Date 2000/9/15
Paper # ED2000-155,MW2000-108
Volume (vol) vol.100
Number (no) 308
Page pp.pp.-
#Pages 5
Date of Issue