Presentation 2000/9/15
Coupled Physical Device-Circuit Simulation
W. Contrata, Y. Ando, M. Kuzuhara,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Large signal simulation using a 2-dimensional GaAs FET Monte Carlo simulator coupled to a practical amplifier circuit is demonstrated. Both FET and circuit are treated in the time domain. Source and load impedances are designed using a small signal model and DC characteristics, for high output power and gain. Simulated power performance is in fair agreement with experiment. Simulated amplitude and phase distortion characteristics(AM, PM) are used to estimate intermodulation distortion products(IMD). In this case, amplitude distortion dominates IMD3 and IMD5. AM-PM characteristics are related to the RF I-V characteristics. This technique can shorten development time by predicting distortion characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) device simulation / MESFET / GaAs / circuit simulation / microwave / distortion
Paper # ED2000-153,MW2000-106
Date of Issue

Conference Information
Committee MW
Conference Date 2000/9/15(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Coupled Physical Device-Circuit Simulation
Sub Title (in English)
Keyword(1) device simulation
Keyword(2) MESFET
Keyword(3) GaAs
Keyword(4) circuit simulation
Keyword(5) microwave
Keyword(6) distortion
1st Author's Name W. Contrata
1st Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corp.()
2nd Author's Name Y. Ando
2nd Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corp.
3rd Author's Name M. Kuzuhara
3rd Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corp.
Date 2000/9/15
Paper # ED2000-153,MW2000-106
Volume (vol) vol.100
Number (no) 308
Page pp.pp.-
#Pages 8
Date of Issue