Presentation | 2000/6/23 Optoelectronic Mixer using InP/InGaAs Double-Heterostructure Photo-Transistors T. Furuta, H. Fushimi, S. Yamahata, T. Ishibashi, Y. Matsuoka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigated the performance of optoelectronic mixer using an InP/InGaAs double-heterostructure photo-transistors. The mixing performance was measured as a function of bias of the device and optical IF(100MHz)and LO(10GHz)signals. Obtained results were compared with that of pin-PD. The maximum obtained RF signal power was found to be -23dBm, which is much larger than that for the pin-PD(-40dBm). The main effect which contributed to the maximum mixing power was considered to be the nonlinear property of current gain in the saturation region. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | photo-transistor / optoelectronic mixer |
Paper # | MW2000-28,OPE2000-28 |
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Committee | MW |
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Conference Date | 2000/6/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Microwaves (MW) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Optoelectronic Mixer using InP/InGaAs Double-Heterostructure Photo-Transistors |
Sub Title (in English) | |
Keyword(1) | photo-transistor |
Keyword(2) | optoelectronic mixer |
1st Author's Name | T. Furuta |
1st Author's Affiliation | NTT Photonics Laboratories() |
2nd Author's Name | H. Fushimi |
2nd Author's Affiliation | NTT Photonics Laboratories |
3rd Author's Name | S. Yamahata |
3rd Author's Affiliation | / NTT Photonics Laboratories / |
4th Author's Name | T. Ishibashi |
4th Author's Affiliation | |
5th Author's Name | Y. Matsuoka |
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Date | 2000/6/23 |
Paper # | MW2000-28,OPE2000-28 |
Volume (vol) | vol.100 |
Number (no) | 158 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |