Presentation 2000/6/23
Optoelectronic Mixer using InP/InGaAs Double-Heterostructure Photo-Transistors
T. Furuta, H. Fushimi, S. Yamahata, T. Ishibashi, Y. Matsuoka,
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Abstract(in English) We investigated the performance of optoelectronic mixer using an InP/InGaAs double-heterostructure photo-transistors. The mixing performance was measured as a function of bias of the device and optical IF(100MHz)and LO(10GHz)signals. Obtained results were compared with that of pin-PD. The maximum obtained RF signal power was found to be -23dBm, which is much larger than that for the pin-PD(-40dBm). The main effect which contributed to the maximum mixing power was considered to be the nonlinear property of current gain in the saturation region.
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Keyword(in English) photo-transistor / optoelectronic mixer
Paper # MW2000-28,OPE2000-28
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Committee MW
Conference Date 2000/6/23(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optoelectronic Mixer using InP/InGaAs Double-Heterostructure Photo-Transistors
Sub Title (in English)
Keyword(1) photo-transistor
Keyword(2) optoelectronic mixer
1st Author's Name T. Furuta
1st Author's Affiliation NTT Photonics Laboratories()
2nd Author's Name H. Fushimi
2nd Author's Affiliation NTT Photonics Laboratories
3rd Author's Name S. Yamahata
3rd Author's Affiliation / NTT Photonics Laboratories /
4th Author's Name T. Ishibashi
4th Author's Affiliation
5th Author's Name Y. Matsuoka
5th Author's Affiliation
Date 2000/6/23
Paper # MW2000-28,OPE2000-28
Volume (vol) vol.100
Number (no) 158
Page pp.pp.-
#Pages 6
Date of Issue