| Presentation | 1999/1/22 E-mode GaAs HJFET for Power Amplifier MMIC of Handy Phones Sadayoshi Yoshida, Yoshiaki Wakabayashi, Kazuyoshi Uemura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to increase the taking time of a handy phone, power-saving at the waiting time, as well as the taking time, is indispensable. For this purpose, we have newly developed a fully enhancement-mode GaAs HJFET(E-HJFET), where the drain leakage current can be cut off at zero gate-bias voltage. The developed E-HJFET(Vth=+0.23V)exhibited 31.5dBm output power, 79.6% power added efficiency(PAE)at 836MHz for 3.5V drain voltage operation. Moreover, the drain leakage current at Vgs=OV is as small as 0.7uA/mm. Power amplifier MMIC implemented by the developed E-HJFET was designed, predicting a high efficiency performance of 70%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / Power Amplifier / Enhancement / Hetero Junction FET / Power Added Efficiency |
| Paper # | ED98-213,MW98-176,ICD98-280 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 1999/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | E-mode GaAs HJFET for Power Amplifier MMIC of Handy Phones |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | Power Amplifier |
| Keyword(3) | Enhancement |
| Keyword(4) | Hetero Junction FET |
| Keyword(5) | Power Added Efficiency |
| 1st Author's Name | Sadayoshi Yoshida |
| 1st Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation.() |
| 2nd Author's Name | Yoshiaki Wakabayashi |
| 2nd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation. |
| 3rd Author's Name | Kazuyoshi Uemura |
| 3rd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation. |
| Date | 1999/1/22 |
| Paper # | ED98-213,MW98-176,ICD98-280 |
| Volume (vol) | vol.98 |
| Number (no) | 522 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |