Presentation 1999/1/20
Device Characterization of Semi-Insulating GaAs Substrate Grown by Vertical Boat Method for Ion-Implantation Process
Masaki Yanagisawa, Shigeru Nakajima, Takashi Sakurada, Makoto Kiyama, Shin-ichi Sawada, Ryusuke Nakai,
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Abstract(in English) The Vertical Boat(VB)method has advantages for manufacturring large diameter GaAs substrates, because of its low dislocation density and small residual strain. The electrical characterization of devices fabricated on VB GaAs substrates was demonstrated in this work. The VB substrate shows the same or better properties compared with the LEC substrate. We conclude that the VB GaAs substrate is expected to be suitable for ion-implantation device process with large diameter substrates.
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Keyword(in English) semi-insulating / GaAs / LEC / VB / ion-implantation
Paper # ED98-187,MW98-150,ICD98-254
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Conference Date 1999/1/20(1days)
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Language JPN
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Title (in English) Device Characterization of Semi-Insulating GaAs Substrate Grown by Vertical Boat Method for Ion-Implantation Process
Sub Title (in English)
Keyword(1) semi-insulating
Keyword(2) GaAs
Keyword(3) LEC
Keyword(4) VB
Keyword(5) ion-implantation
1st Author's Name Masaki Yanagisawa
1st Author's Affiliation Optoelectronics R & D Laboratories, Sumitomo Electric Industries, LTD.()
2nd Author's Name Shigeru Nakajima
2nd Author's Affiliation Optoelectronics R & D Laboratories, Sumitomo Electric Industries, LTD.
3rd Author's Name Takashi Sakurada
3rd Author's Affiliation Itami Research Laboratories, Sumitomo electric Industries, LTD.
4th Author's Name Makoto Kiyama
4th Author's Affiliation Itami Research Laboratories, Sumitomo Electric Industries, LTD.
5th Author's Name Shin-ichi Sawada
5th Author's Affiliation Itami Research Laboratories, Sumitomo Electric Industries, LTD.
6th Author's Name Ryusuke Nakai
6th Author's Affiliation Semiconductor Division, Sumitomo electric Industries, LTD.
Date 1999/1/20
Paper # ED98-187,MW98-150,ICD98-254
Volume (vol) vol.98
Number (no) 520
Page pp.pp.-
#Pages 8
Date of Issue