Presentation 1996/2/28
U-band High Power HEMT
M. Komaru, N. Yoshida, T. Katoh, H. Hoshi, U. Uneme, T. Kashiwa, T. Shimura, T. Takagi,
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Abstract(in English) The optimum gate width and the number of the gate fingers of high power AlGaAs/InGaAs PHEMT for U-band high power amplifiers have been characterized by 2-finger PHEMTs's s-parameter measurements and equivarent circuits simulations of multi finger PHEMTs. From the results, we have selected a 40um × 10 finger device as the best gate periphery one, and designed an amplifier. The device delivered 23.6dBm output power with associated gain of 5.1dB and PAE of 42.3% at 35GHz, and 20.2dBm output power with associated gain of 4.2dB and PAE of 22% at 60GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) PHEMT / Millimeter Wave / High Power / High Efficiency / Amplifier
Paper # MW95-196
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Committee MW
Conference Date 1996/2/28(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) U-band High Power HEMT
Sub Title (in English)
Keyword(1) PHEMT
Keyword(2) Millimeter Wave
Keyword(3) High Power
Keyword(4) High Efficiency
Keyword(5) Amplifier
1st Author's Name M. Komaru
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name N. Yoshida
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name T. Katoh
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name H. Hoshi
4th Author's Affiliation Mitsubishi Electric Corporation
5th Author's Name U. Uneme
5th Author's Affiliation Mitsubishi Electric Corporation
6th Author's Name T. Kashiwa
6th Author's Affiliation Mitsubishi Electric Corporation
7th Author's Name T. Shimura
7th Author's Affiliation Mitsubishi Electric Corporation
8th Author's Name T. Takagi
8th Author's Affiliation Mitsubishi Electric Corporation
Date 1996/2/28
Paper # MW95-196
Volume (vol) vol.95
Number (no) 546
Page pp.pp.-
#Pages 6
Date of Issue