Presentation 1997/9/26
A Study of Inter modulation Distortion of Microwave FET for Impedance of Bias Circuit and Bias Condition Dependence
Masatoshi Nakayama, Kenichi Horiguchi, Tadashi Takagi,
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Abstract(in English) A model is investigated to explain the difference of IM distortion performances of microwave FET amplifiers depending on bias circuit impedance for separation frequency (Δ) of 2-tone signals. The model is moving bias point model with frequency of Δ. It predicts that better IM3 performance will be obtained with low impedance bias circuit at AB-class high drain voltage bias condition, though, better IM3 performance will be obtained with high impedance bias circuit at A-class low drain voltage bias condition. Measured results agree with the prediction. To verify of the model, measured IM3 and calculated IM3 are compared. The calculated values are obtained based on measured AM-AM, AM-PM characteristics of the FET amplifiers, which are biased with consideration of the moving bias point model. A good agreement of these values supports the model.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Microwave / FET amplifier / Inter modulation distortion / Bias circuit / Separation frequency / IF frequency
Paper # MW97-86
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Conference Date 1997/9/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study of Inter modulation Distortion of Microwave FET for Impedance of Bias Circuit and Bias Condition Dependence
Sub Title (in English)
Keyword(1) Microwave
Keyword(2) FET amplifier
Keyword(3) Inter modulation distortion
Keyword(4) Bias circuit
Keyword(5) Separation frequency
Keyword(6) IF frequency
1st Author's Name Masatoshi Nakayama
1st Author's Affiliation Mitsubishi Electric Corporation Information Technology R & D Center()
2nd Author's Name Kenichi Horiguchi
2nd Author's Affiliation Mitsubishi Electric Corporation Information Technology R & D Center
3rd Author's Name Tadashi Takagi
3rd Author's Affiliation Mitsubishi Electric Corporation Information Technology R & D Center
Date 1997/9/26
Paper # MW97-86
Volume (vol) vol.97
Number (no) 288
Page pp.pp.-
#Pages 6
Date of Issue