| Presentation | 2002/9/19 A JFET Device for CMOS Integrated Circuits and Its Application to CMOS-Based Low Noise Amplifiers Hidekuni Takao, Rikiya Asaoka, Yoshiaki Ito, Kazuaki Sawada, Syoji Kawahito, Makoto Ishida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, a fabrication technology of JFET integration in standard CMOS is presented. JFET is used in CMOS (operational) amplifiers for realization of very low-noise sensor interface circuits. JFET devices are formed with "well" structures in standard CMOS circuits. In a p-well region, n-type channel is formed by deep P ion-implantation with energy of 150 keV to connect n+ source and drain region already formed. After that, p-type top gate is formed by B ion-implantation with energy of 30 keV. Fabricated JFET devices showed larger transconductance as compared to MOSFET devices formed on the same die. Noise power-spectrum of fabricated JFET was also evaluated, and very low-level noise amplitude was observed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | JFET-CMOS / Low-Noise Amplifier / High Input Impedance / Sensor Interface |
| Paper # | ICD2002-80 |
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| Committee | ICD |
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| Conference Date | 2002/9/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A JFET Device for CMOS Integrated Circuits and Its Application to CMOS-Based Low Noise Amplifiers |
| Sub Title (in English) | |
| Keyword(1) | JFET-CMOS |
| Keyword(2) | Low-Noise Amplifier |
| Keyword(3) | High Input Impedance |
| Keyword(4) | Sensor Interface |
| 1st Author's Name | Hidekuni Takao |
| 1st Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Rikiya Asaoka |
| 2nd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Yoshiaki Ito |
| 3rd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 4th Author's Name | Kazuaki Sawada |
| 4th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 5th Author's Name | Syoji Kawahito |
| 5th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology:(Present address)Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | Makoto Ishida |
| 6th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| Date | 2002/9/19 |
| Paper # | ICD2002-80 |
| Volume (vol) | vol.102 |
| Number (no) | 339 |
| Page | pp.pp.- |
| #Pages | 6 |
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