| Presentation | 2002/1/9 Analysis of Relationship between Gate-Lag and Breakdown Phenomena in Recessed-Gate GaAs MMSFETs Y. MITANI, D. KASAI, A. WAKABAYASHI, K. HORIO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two-dimensional numerical analysis of recessed-gate GaAs MESFETs is performed in which surface states and impact ionization of carriers are considered. Effects of surface states and recess structure on the breakdown characteristics are studied. It is also studied how the gate-lag phenomena are influenced by the impact ionization and the recess parameters. It is shown that by introducing the (narrowly) recessed-gate structure, the gate-lag is reduced, but the breakdown voltage is inversely lowered in some cases. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs MESFET / recessed-gate structure / surface state / gate-lag / breakdown / 2D analysis |
| Paper # | 2001-ED-196,2001-MW-151,2001-ICD-193 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2002/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Relationship between Gate-Lag and Breakdown Phenomena in Recessed-Gate GaAs MMSFETs |
| Sub Title (in English) | |
| Keyword(1) | GaAs MESFET |
| Keyword(2) | recessed-gate structure |
| Keyword(3) | surface state |
| Keyword(4) | gate-lag |
| Keyword(5) | breakdown |
| Keyword(6) | 2D analysis |
| 1st Author's Name | Y. MITANI |
| 1st Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology() |
| 2nd Author's Name | D. KASAI |
| 2nd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
| 3rd Author's Name | A. WAKABAYASHI |
| 3rd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
| 4th Author's Name | K. HORIO |
| 4th Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
| Date | 2002/1/9 |
| Paper # | 2001-ED-196,2001-MW-151,2001-ICD-193 |
| Volume (vol) | vol.101 |
| Number (no) | 555 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |