Presentation | 2002/1/9 Effect of Gate-Recess Structure on the High Frequency Performance of Ultra-Fast InP-Based HEMTs : Asymmetric Gate-Recess Fabrication and Characterization Keisuke SHINOHARA, Toshiaki MATSUI, Yoshimi YAMASHITA, Akira ENDOH, Kohki HIKOSAKA, Takashi MIMURA, Satoshi HIYAMIZU, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) are the fastest transistors at present and key devices for the future millimeter-wave and optical communications. In this paper, a self-aligned asymmetric gate-recess structure for the ultra-fast InGaAs/InAlAs HEMTs is developed in order to investigate the effect of the gate-recess structure on their high frequency performances. A 60-nm-gate HEMT with a longer drain-side recess length (Lrd) exhibits a much-improved maximum oscillation frequency (fmax) of 503 GHz compared to that (281GHz) with a symmetric recess structure mainly due to a decrease in a drain conductance (gd) and a gate-drain capacitance (Cgd). This result indicates that the longer Lrd results in a longer depletion area at the drain end of the gate and then alleviate electric field between gate and drain. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InP-HEMT / Asymmetric gate-recess / Cutoff frequency / ft / Maximum oscillation frequcency / fmax |
Paper # | 2001-ED-195,2001-MW-150,2001-ICD-192 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2002/1/9(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effect of Gate-Recess Structure on the High Frequency Performance of Ultra-Fast InP-Based HEMTs : Asymmetric Gate-Recess Fabrication and Characterization |
Sub Title (in English) | |
Keyword(1) | InP-HEMT |
Keyword(2) | Asymmetric gate-recess |
Keyword(3) | Cutoff frequency |
Keyword(4) | ft |
Keyword(5) | Maximum oscillation frequcency |
Keyword(6) | fmax |
1st Author's Name | Keisuke SHINOHARA |
1st Author's Affiliation | Communications Research Laboratory() |
2nd Author's Name | Toshiaki MATSUI |
2nd Author's Affiliation | Communications Research Laboratory |
3rd Author's Name | Yoshimi YAMASHITA |
3rd Author's Affiliation | Fujitsu Limited |
4th Author's Name | Akira ENDOH |
4th Author's Affiliation | Fujitsu Limited |
5th Author's Name | Kohki HIKOSAKA |
5th Author's Affiliation | Fujitsu Limited |
6th Author's Name | Takashi MIMURA |
6th Author's Affiliation | Fujitsu Limited |
7th Author's Name | Satoshi HIYAMIZU |
7th Author's Affiliation | Graduate School of Engineering Science, Osaka University |
Date | 2002/1/9 |
Paper # | 2001-ED-195,2001-MW-150,2001-ICD-192 |
Volume (vol) | vol.101 |
Number (no) | 555 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |