Presentation 2002/1/9
High-Speed InP/InGaAs DHBTs with Improved Collector Transport
A. Fujihara, Y. Ikenage, H. Takahashi, M. Kawanaka, S. Tanaka,
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Abstract(in English) We demonstrate high-speed InP/InGaAS double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high f_(~300 GHz) while maintaning high F_T(>200 GHz). The DHBTs also achieve a peak f_T of 242GHz due to successful suppression of current blocking effect at high current density operations. The DHBTs will meet the demand of ultra-high-speed applications for both high f_T and high F.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DHBT / InP / InGaAs / composite / collector / bauiostic transport
Paper # 2001-ED-194,2001-MW-149,2001-ICD-191
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Conference Date 2002/1/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Speed InP/InGaAs DHBTs with Improved Collector Transport
Sub Title (in English)
Keyword(1) DHBT
Keyword(2) InP
Keyword(3) InGaAs
Keyword(4) composite
Keyword(5) collector
Keyword(6) bauiostic transport
1st Author's Name A. Fujihara
1st Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation()
2nd Author's Name Y. Ikenage
2nd Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
3rd Author's Name H. Takahashi
3rd Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
4th Author's Name M. Kawanaka
4th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
5th Author's Name S. Tanaka
5th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
Date 2002/1/9
Paper # 2001-ED-194,2001-MW-149,2001-ICD-191
Volume (vol) vol.101
Number (no) 555
Page pp.pp.-
#Pages 6
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