Presentation 2002/1/9
Current Collapse in GaN HEMTs
Yutaka OHNO, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI,
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Abstract(in English) We have investigated a drain current collapse in GaN HEMTs by means of electrical characterizations and its response to illumination. It has been pointed out that a serious current collapse occurs when a stress of negative gate voltage is applied to the device. Dependences of the current collapse on stress voltage and on stressing time were measured. The region where traps responsible for the collapse exist was investigated by illumination of spatially resolved light to the device. The results suggest the collapse is caused by the virtual gate which is formed between drain and gate due to electrons trapped in surface states.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN HEMT / current collapse / photoresponse / surface trap
Paper # 187-ED-2001,2001-MW-142,2001-ICD-184
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Conference Date 2002/1/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Current Collapse in GaN HEMTs
Sub Title (in English)
Keyword(1) GaN HEMT
Keyword(2) current collapse
Keyword(3) photoresponse
Keyword(4) surface trap
1st Author's Name Yutaka OHNO
1st Author's Affiliation Department of Quantum Engineering, Nagaya University()
2nd Author's Name Shigeru KISHIMOTO
2nd Author's Affiliation Department of Quantum Engineering, Nagaya University
3rd Author's Name Koichi MAEZAWA
3rd Author's Affiliation Department of Quantum Engineering, Nagaya University
4th Author's Name Takashi MIZUTANI
4th Author's Affiliation Department of Quantum Engineering, Nagaya University
Date 2002/1/9
Paper # 187-ED-2001,2001-MW-142,2001-ICD-184
Volume (vol) vol.101
Number (no) 555
Page pp.pp.-
#Pages 6
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