Presentation | 2002/1/9 Current Collapse in GaN HEMTs Yutaka OHNO, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have investigated a drain current collapse in GaN HEMTs by means of electrical characterizations and its response to illumination. It has been pointed out that a serious current collapse occurs when a stress of negative gate voltage is applied to the device. Dependences of the current collapse on stress voltage and on stressing time were measured. The region where traps responsible for the collapse exist was investigated by illumination of spatially resolved light to the device. The results suggest the collapse is caused by the virtual gate which is formed between drain and gate due to electrons trapped in surface states. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN HEMT / current collapse / photoresponse / surface trap |
Paper # | 187-ED-2001,2001-MW-142,2001-ICD-184 |
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Committee | ICD |
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Conference Date | 2002/1/9(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Current Collapse in GaN HEMTs |
Sub Title (in English) | |
Keyword(1) | GaN HEMT |
Keyword(2) | current collapse |
Keyword(3) | photoresponse |
Keyword(4) | surface trap |
1st Author's Name | Yutaka OHNO |
1st Author's Affiliation | Department of Quantum Engineering, Nagaya University() |
2nd Author's Name | Shigeru KISHIMOTO |
2nd Author's Affiliation | Department of Quantum Engineering, Nagaya University |
3rd Author's Name | Koichi MAEZAWA |
3rd Author's Affiliation | Department of Quantum Engineering, Nagaya University |
4th Author's Name | Takashi MIZUTANI |
4th Author's Affiliation | Department of Quantum Engineering, Nagaya University |
Date | 2002/1/9 |
Paper # | 187-ED-2001,2001-MW-142,2001-ICD-184 |
Volume (vol) | vol.101 |
Number (no) | 555 |
Page | pp.pp.- |
#Pages | 6 |
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