| Presentation | 2002/1/9 Novel AlGaN/GaN Mos HFETs with Thermally Grown Gate Oxide Y. Ikeda, K. Inoue, H. Masato, T. Matsuno, K. Nishii, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN MOS HFETs with gate oxides formed by direct thermal oxidation of AlGaN/GaN epi layers have been developed for the first time. The fabricated MOS HFETs have exhibited high breakdown voltages, low gate leakage currents and stable operation at high drain voltages. Although MOS HFET with an undoped channel structure showed a reduced maximum drain current of 4OOmA/mm, higher drain currents up to 9OOmA/mm has been obtained by adopting a doped-channel structure. The gate leakage current has markedly decreased with the increase of the gate-oxide thickness, clearly showing the effectiveness of MOS structures in reducing gate leakage currents. The stable device operations at high drain voltages indicate that the trap density at the interface between the thermal oxide and epi layers will be low and the thermal oxide can be also used as a passivation film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | gate insulator / thermal oxide / AlGaN/GaN / MOS / HFET / gate leakage current / passivation film |
| Paper # | 2001-ED-186,2001-MW-141,2001-ICD-183 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2002/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Novel AlGaN/GaN Mos HFETs with Thermally Grown Gate Oxide |
| Sub Title (in English) | |
| Keyword(1) | gate insulator |
| Keyword(2) | thermal oxide |
| Keyword(3) | AlGaN/GaN |
| Keyword(4) | MOS |
| Keyword(5) | HFET |
| Keyword(6) | gate leakage current |
| Keyword(7) | passivation film |
| 1st Author's Name | Y. Ikeda |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | K. Inoue |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | H. Masato |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | T. Matsuno |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | K. Nishii |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2002/1/9 |
| Paper # | 2001-ED-186,2001-MW-141,2001-ICD-183 |
| Volume (vol) | vol.101 |
| Number (no) | 555 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |