| Presentation | 2002/1/9 AlGaN/GaN HEMTの高周波特性 Y. Sano, K. Kaifu, J. Mita, T. Yamada, T. Makita, H. Ishikawa, T. Egawa, T. Jimbo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The AlGaN/GaN HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation and high frequency characteristics. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic f_T (49.7GHz) was as high as 1.56 x 10^7 cm/sec. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length exhibited excellent high frequency performances. A maximum unity current cut-off frequency, f_T, of 57.2 GHz and a maximum oscillation frequency, f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gan / AlGan / HEMT / Recessed Gate / Sapphire / High Frequency |
| Paper # | 2001-ED-184,2001-MW-139,2001-ICD-181 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2002/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | |
| Sub Title (in English) | |
| Keyword(1) | Gan |
| Keyword(2) | AlGan |
| Keyword(3) | HEMT |
| Keyword(4) | Recessed Gate |
| Keyword(5) | Sapphire |
| Keyword(6) | High Frequency |
| 1st Author's Name | Y. Sano |
| 1st Author's Affiliation | Corporate Research Laboratory, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | K. Kaifu |
| 2nd Author's Affiliation | Corporate Research Laboratory, Oki Electric Industry Co., Ltd.:Ultra-Low-Loss Power Device Technology Research Body |
| 3rd Author's Name | J. Mita |
| 3rd Author's Affiliation | Corporate Research Laboratory, Oki Electric Industry Co., Ltd.:Ultra-Low-Loss Power Device Technology Research Body |
| 4th Author's Name | T. Yamada |
| 4th Author's Affiliation | Corporate Research Laboratory, Oki Electric Industry Co., Ltd.:Ultra-Low-Loss Power Device Technology Research Body |
| 5th Author's Name | T. Makita |
| 5th Author's Affiliation | Corporate Research Laboratory, Oki Electric Industry Co., Ltd.:Ultra-Low-Loss Power Device Technology Research Body |
| 6th Author's Name | H. Ishikawa |
| 6th Author's Affiliation | Nagoya Institute of Technology |
| 7th Author's Name | T. Egawa |
| 7th Author's Affiliation | Nagoya Institute of Technology |
| 8th Author's Name | T. Jimbo |
| 8th Author's Affiliation | Nagoya Institute of Technology |
| Date | 2002/1/9 |
| Paper # | 2001-ED-184,2001-MW-139,2001-ICD-181 |
| Volume (vol) | vol.101 |
| Number (no) | 555 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |