Presentation 2001/5/18
A Capacitive Fingerprint Sensor with Low-Temperature Poly-Si TFTs
Ryuichi Hashido, Akihiko Iwata, Tatsuki Okamoto, Yukio Satoh, Mitsuo Inoue,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed a capacitive fingerprint sensor using low-temperature poly-Si TFTs and succeeded to getting good results about fingerprint certifications. The chip area is 30mm×20mm and tile array area of this sensor is 20mm×15mm. High resolution of 423dpi (60μm pitch) has been realized by a nobel cell structure only with one transistor and one sensor plate. This method is able to get big dynamic range for protecting leak current in other arrays by utilizing the big threshold voltage of low-temperature poly-Si TFTs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) low temperature poly-Si / fingerprint / capacitive
Paper # ICD2001-26
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Committee ICD
Conference Date 2001/5/18(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Capacitive Fingerprint Sensor with Low-Temperature Poly-Si TFTs
Sub Title (in English)
Keyword(1) low temperature poly-Si
Keyword(2) fingerprint
Keyword(3) capacitive
1st Author's Name Ryuichi Hashido
1st Author's Affiliation ()
2nd Author's Name Akihiko Iwata
2nd Author's Affiliation
3rd Author's Name Tatsuki Okamoto
3rd Author's Affiliation
4th Author's Name Yukio Satoh
4th Author's Affiliation
5th Author's Name Mitsuo Inoue
5th Author's Affiliation
Date 2001/5/18
Paper # ICD2001-26
Volume (vol) vol.101
Number (no) 85
Page pp.pp.-
#Pages 7
Date of Issue