Presentation 2001/5/18
Self-Heating Free Parameter Extraction and Circuit Simulation for SOI CMOS
Hajime Nakayama, Pin Su, Chenming Hu, Motoaki Nakamura, Hiroshi Komatsu, Kaneyoshi Takeshita, Yasutoshi Komatsu,
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Abstract(in English) Novel SOI (Silicon On Insulator) model parameter extraction methodology based on the concept of SHE (Self-Heating Effect) free device modeling, is proposed and demonstrated for a 0.18 μm PD (Partially Depleted) SOI technology. In this technology, prior to SPICE parameter extraction, the device thermal resistances are measured and the current loss due to SHE is added back analytically to dc IV data. Therefore, the parameters are free from SHE. Dc, ac, and transient simulation results using this technology show good agreement with measurement data.
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Keyword(in English) SOI / Self-Heating Effect / SPICE simulation / SPICE parameter / thermal resistance
Paper # ICD2001-24
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Conference Date 2001/5/18(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Self-Heating Free Parameter Extraction and Circuit Simulation for SOI CMOS
Sub Title (in English)
Keyword(1) SOI
Keyword(2) Self-Heating Effect
Keyword(3) SPICE simulation
Keyword(4) SPICE parameter
Keyword(5) thermal resistance
1st Author's Name Hajime Nakayama
1st Author's Affiliation LSI Technology Development Division, SONY Corp.()
2nd Author's Name Pin Su
2nd Author's Affiliation Department of EECS, University of California at Berkeley
3rd Author's Name Chenming Hu
3rd Author's Affiliation Department of EECS, University of California at Berkeley
4th Author's Name Motoaki Nakamura
4th Author's Affiliation LSI Technology Development Division, SONY Corp.
5th Author's Name Hiroshi Komatsu
5th Author's Affiliation LSI Technology Development Division, SONY Corp.
6th Author's Name Kaneyoshi Takeshita
6th Author's Affiliation LSI Technology Development Division, SONY Corp.
7th Author's Name Yasutoshi Komatsu
7th Author's Affiliation LSI Technology Development Division, SONY Corp.
Date 2001/5/18
Paper # ICD2001-24
Volume (vol) vol.101
Number (no) 85
Page pp.pp.-
#Pages 8
Date of Issue