| Presentation | 2001/1/11 Ultra-Short T-shaped gate fabrication technique for sub-millimeter-wave InP-HEMTs : Optimization of process conditions Keisuke Shinohara, Nobumitsu Hirose, Masataka Higashiwaki, Toshiaki Matsui, Yoshimi Yamashita, Kouki Hikosaka, Takashi Mimura, Satoshi Hiyamizu, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) are considered to be one of the most promising devices for millimeter-wave radio communications because of their superior high frequency and low-noise performances. This is due to high electron mobility, high saturation velocity. and high sheet carrier density obtained in this system. A shorrrter gate is also essential for ultra-high RF performances. In our previous work, RF performances have been significantly improved by reducing gate length (Lg) down to 50 nm using a simple lift-off process and a low temperature process. In this paper, we have developed a sub-50-nm T-shaped-gate fabrication technique using a conventional tri-layer resist system by optimizing electron beam (EB) lithography and reactive ion etching (RIE) conditions, demonstrating a cutoff frequency (fT) as high as 318 GHz in a 35-nm-gate HEMT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | T-shaped gate / HEMT / millimeter-wave / sub-millimeter-wave / cutoff frequency |
| Paper # | ED2000-233,MW2000-182,ICD2000-193 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2001/1/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-Short T-shaped gate fabrication technique for sub-millimeter-wave InP-HEMTs : Optimization of process conditions |
| Sub Title (in English) | |
| Keyword(1) | T-shaped gate |
| Keyword(2) | HEMT |
| Keyword(3) | millimeter-wave |
| Keyword(4) | sub-millimeter-wave |
| Keyword(5) | cutoff frequency |
| 1st Author's Name | Keisuke Shinohara |
| 1st Author's Affiliation | Cmmunications Research Laboratory() |
| 2nd Author's Name | Nobumitsu Hirose |
| 2nd Author's Affiliation | Cmmunications Research Laboratory |
| 3rd Author's Name | Masataka Higashiwaki |
| 3rd Author's Affiliation | Cmmunications Research Laboratory |
| 4th Author's Name | Toshiaki Matsui |
| 4th Author's Affiliation | Cmmunications Research Laboratory |
| 5th Author's Name | Yoshimi Yamashita |
| 5th Author's Affiliation | Fujitsu Limited |
| 6th Author's Name | Kouki Hikosaka |
| 6th Author's Affiliation | Fujitsu Limitedr |
| 7th Author's Name | Takashi Mimura |
| 7th Author's Affiliation | Fujitsu Limited |
| 8th Author's Name | Satoshi Hiyamizu |
| 8th Author's Affiliation | Osaka University |
| Date | 2001/1/11 |
| Paper # | ED2000-233,MW2000-182,ICD2000-193 |
| Volume (vol) | vol.100 |
| Number (no) | 554 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |