Presentation	2001/1/11 AIGaAs-HBT MMIC Power Amplifiers for GSM Phones R. Hattori, S. Suzuki, K. Yamamoto, Y. Yamamoto, S. Miyakuni, T. Shimura,
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Abstract(in English)	Highly reliable and reproducible mass production of AIGaAs/GaAs HBT Dual Band MMICs for GSM phones is reviewed in theis paper. Design of the thermal structures and the Active Feedback Circuits for high VSWR operation which are the key technologies for GSM application, are also briefly reviewed.
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Paper #	ED2000-228,MW2000-177,ICD2000-188
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Committee	ICD
Conference Date	2001/1/11(1days)
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Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
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Title (in English)	AIGaAs-HBT MMIC Power Amplifiers for GSM Phones
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1st Author's Name	R. Hattori
1st Author's Affiliation	Mitsubishi Electric Corp. High Frequency & Optical Semiconductor Div.()
2nd Author's Name	S. Suzuki
2nd Author's Affiliation	Mitsubishi Electric Corp. High Frequency & Optical Semiconductor Div.
3rd Author's Name	K. Yamamoto
3rd Author's Affiliation	Mitsubishi Electric Corp. High Frequency & Optical Semiconductor Div.
4th Author's Name	Y. Yamamoto
4th Author's Affiliation	Mitsubishi Electric Corp. High Frequency & Optical Semiconductor Div.
5th Author's Name	S. Miyakuni
5th Author's Affiliation	Mitsubishi Electric Corp. High Frequency & Optical Semiconductor Div.
6th Author's Name	T. Shimura
6th Author's Affiliation	Mitsubishi Electric Corp. High Frequency & Optical Semiconductor Div.
Date	2001/1/11
Paper #	ED2000-228,MW2000-177,ICD2000-188
Volume (vol)	vol.100
Number (no)	554
Page	pp.pp.-
#Pages	4
Date of Issue