Presentation | 2001/1/11 Low-Distortion and High Output Power Pulse-doped GaAs MESFETs with Asymmetric LDD structure K. Nakata, K. Otobe, S. Nakajima, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have adopted an asymmetric LDD structure to pulse-doped FET. An n′implanted region was optimized to reduce effect of impact ionization phenomenon. As a result, an on state breakdown voltage was improved to over 22V, and a saturation output power of 905mW/mm was achieved at 15V operation. The Inearity of gm and gd were also improved, and then highest PAE of 39.5% at low back off (IM3=-35dBc) was achieved. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MESFET / Digital wireless communication / Low distortion / High output power / Impact ionization |
Paper # | ED2000-227,MW2000-176,ICD2000-187 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2001/1/11(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low-Distortion and High Output Power Pulse-doped GaAs MESFETs with Asymmetric LDD structure |
Sub Title (in English) | |
Keyword(1) | MESFET |
Keyword(2) | Digital wireless communication |
Keyword(3) | Low distortion |
Keyword(4) | High output power |
Keyword(5) | Impact ionization |
1st Author's Name | K. Nakata |
1st Author's Affiliation | Advanced High-speed Devices Business Department, Sumitomo Electric Industry, LTD() |
2nd Author's Name | K. Otobe |
2nd Author's Affiliation | Advanced High-speed Devices Business Department, Sumitomo Electric Industry, LTD |
3rd Author's Name | S. Nakajima |
3rd Author's Affiliation | Advanced High-speed Devices Business Department, Sumitomo Electric Industry, LTD |
Date | 2001/1/11 |
Paper # | ED2000-227,MW2000-176,ICD2000-187 |
Volume (vol) | vol.100 |
Number (no) | 554 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |