| Presentation | 2001/1/11 Low-Distortion and High Output Power Pulse-doped GaAs MESFETs with Asymmetric LDD structure K. Nakata, K. Otobe, S. Nakajima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have adopted an asymmetric LDD structure to pulse-doped FET. An n′implanted region was optimized to reduce effect of impact ionization phenomenon. As a result, an on state breakdown voltage was improved to over 22V, and a saturation output power of 905mW/mm was achieved at 15V operation. The Inearity of gm and gd were also improved, and then highest PAE of 39.5% at low back off (IM3=-35dBc) was achieved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MESFET / Digital wireless communication / Low distortion / High output power / Impact ionization |
| Paper # | ED2000-227,MW2000-176,ICD2000-187 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2001/1/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Distortion and High Output Power Pulse-doped GaAs MESFETs with Asymmetric LDD structure |
| Sub Title (in English) | |
| Keyword(1) | MESFET |
| Keyword(2) | Digital wireless communication |
| Keyword(3) | Low distortion |
| Keyword(4) | High output power |
| Keyword(5) | Impact ionization |
| 1st Author's Name | K. Nakata |
| 1st Author's Affiliation | Advanced High-speed Devices Business Department, Sumitomo Electric Industry, LTD() |
| 2nd Author's Name | K. Otobe |
| 2nd Author's Affiliation | Advanced High-speed Devices Business Department, Sumitomo Electric Industry, LTD |
| 3rd Author's Name | S. Nakajima |
| 3rd Author's Affiliation | Advanced High-speed Devices Business Department, Sumitomo Electric Industry, LTD |
| Date | 2001/1/11 |
| Paper # | ED2000-227,MW2000-176,ICD2000-187 |
| Volume (vol) | vol.100 |
| Number (no) | 554 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |