Presentation 2001/1/11
High Bias voltage Operation High Power GaAs FP-HFET
K. Matsunaga, K. Ishikura, I. Takenaka, A. Wakejima, K. Ota, M. Kanamori, M. Kuzuhara,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper describes an L-band depletion-mode GaAs-based heterostructure FET (HFET) with a field-modulating plate (FP) for cellular base station applications. A one-cell FP-HFET demonstrated an output power density of 1.7W/mm at a drain bias of 40V, indicating strong potential for high voltage operation. An FP-HFET power amplifier, consisting of four 86.4mm gate-width chips, delivered a 53.6dBm (230W) output power at 2.1GHz with 11dB linear gain and 42% PAE operated at a drain bias of 22V. A low adjacent channel power ration (ACPR) of-35dBc with 25% PAE was obtained at an output power of 46dBm, indicating superior linearity characteristics under elevated drain bias conditions. The device also exhibited a record saturated power density of 0.67W/mm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs HFET / field plate / microwave / high power / high bias / low distortion
Paper # ED2000-226,MW2000-175,ICD2000-186
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Conference Date 2001/1/11(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Bias voltage Operation High Power GaAs FP-HFET
Sub Title (in English)
Keyword(1) GaAs HFET
Keyword(2) field plate
Keyword(3) microwave
Keyword(4) high power
Keyword(5) high bias
Keyword(6) low distortion
1st Author's Name K. Matsunaga
1st Author's Affiliation Photonic and Wireless Devices Research Laboratories NEC Corporation()
2nd Author's Name K. Ishikura
2nd Author's Affiliation Compound Semiconductor Device Division NEC Corporation
3rd Author's Name I. Takenaka
3rd Author's Affiliation Compound Semiconductor Device Division NEC Corporation
4th Author's Name A. Wakejima
4th Author's Affiliation Photonic and Wireless Devices Research Laboratories NEC Corporation
5th Author's Name K. Ota
5th Author's Affiliation Photonic and Wireless Devices Research Laboratories NEC Corporation
6th Author's Name M. Kanamori
6th Author's Affiliation Compound Semiconductor Device Division NEC Corporation
7th Author's Name M. Kuzuhara
7th Author's Affiliation Photonic and Wireless Devices Research Laboratories NEC Corporation
Date 2001/1/11
Paper # ED2000-226,MW2000-175,ICD2000-186
Volume (vol) vol.100
Number (no) 554
Page pp.pp.-
#Pages 6
Date of Issue