Presentation | 2001/1/11 High Bias voltage Operation High Power GaAs FP-HFET K. Matsunaga, K. Ishikura, I. Takenaka, A. Wakejima, K. Ota, M. Kanamori, M. Kuzuhara, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper describes an L-band depletion-mode GaAs-based heterostructure FET (HFET) with a field-modulating plate (FP) for cellular base station applications. A one-cell FP-HFET demonstrated an output power density of 1.7W/mm at a drain bias of 40V, indicating strong potential for high voltage operation. An FP-HFET power amplifier, consisting of four 86.4mm gate-width chips, delivered a 53.6dBm (230W) output power at 2.1GHz with 11dB linear gain and 42% PAE operated at a drain bias of 22V. A low adjacent channel power ration (ACPR) of-35dBc with 25% PAE was obtained at an output power of 46dBm, indicating superior linearity characteristics under elevated drain bias conditions. The device also exhibited a record saturated power density of 0.67W/mm. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAs HFET / field plate / microwave / high power / high bias / low distortion |
Paper # | ED2000-226,MW2000-175,ICD2000-186 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2001/1/11(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High Bias voltage Operation High Power GaAs FP-HFET |
Sub Title (in English) | |
Keyword(1) | GaAs HFET |
Keyword(2) | field plate |
Keyword(3) | microwave |
Keyword(4) | high power |
Keyword(5) | high bias |
Keyword(6) | low distortion |
1st Author's Name | K. Matsunaga |
1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation() |
2nd Author's Name | K. Ishikura |
2nd Author's Affiliation | Compound Semiconductor Device Division NEC Corporation |
3rd Author's Name | I. Takenaka |
3rd Author's Affiliation | Compound Semiconductor Device Division NEC Corporation |
4th Author's Name | A. Wakejima |
4th Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
5th Author's Name | K. Ota |
5th Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
6th Author's Name | M. Kanamori |
6th Author's Affiliation | Compound Semiconductor Device Division NEC Corporation |
7th Author's Name | M. Kuzuhara |
7th Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
Date | 2001/1/11 |
Paper # | ED2000-226,MW2000-175,ICD2000-186 |
Volume (vol) | vol.100 |
Number (no) | 554 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |