Presentation 2000/9/15
Reduction of swtching noise and charge feed through using a class AB switching technique
Shinya Yamamoto, Mamoru Sasaki,
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Abstract(in English) Current Memory cell works as a current sampling and holding circuit. It can accurately memorize an input current independent of element matching because it consists of unit device, although accuracy of current mirror based memory is limited by element matching. However, in a practice, its accuracy degrades due to chanel length modulation effect, charge feed through from switches, and electrical noises generated within the MOSFETs themselves. In this paper we propose a technique for current memory cell which reduce such non-idealities by introducing class AB switching technique. It have been confirmed by HSPICE simulation that charge feed through error and RMS of thermal noise can be reduced to 0.1% and one-fifth, respectively. As an application, algolithmic A/D converter has been designed using 1.5μm CMOS fabrication process. The performances(10bit resolution, 2MHz clock operation, 2.0V power supply, 0.45mW power consumption)are confirmed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) current-memory / class AB switching technique / charge feed through / switching noise
Paper # ICD2000-93
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Committee ICD
Conference Date 2000/9/15(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Reduction of swtching noise and charge feed through using a class AB switching technique
Sub Title (in English)
Keyword(1) current-memory
Keyword(2) class AB switching technique
Keyword(3) charge feed through
Keyword(4) switching noise
1st Author's Name Shinya Yamamoto
1st Author's Affiliation Dept.of Electrical and Computer Engineering, Kumamoto University()
2nd Author's Name Mamoru Sasaki
2nd Author's Affiliation Dept.of Electrical and Computer Engineering, Kumamoto University
Date 2000/9/15
Paper # ICD2000-93
Volume (vol) vol.100
Number (no) 310
Page pp.pp.-
#Pages 8
Date of Issue