Presentation	2000/8/18 ED2000-136 / SDM2000-118 / ICD-2000-72 Multilevel interconnects Technologies Using Cu and low-k Dielectrics I. Yamamura, T. Hasegawa, K. Ikeda, K. Tokunaga, M. Fukasawa, H. Kito, K. Miyata, N. Komai, M. Taguchi, S. Hirano, T. Tatsumi, S. Kadomura,
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Abstract(in English)	Reliable Cu dual damascene(D.D.)interconnects with low-K(K_<3.0)that use an organic material(FLARE^;K=2.8)and a methyl-silsesquioxane(MSQ;K=2.7)film have been developed. We successfully substituted the MSQ for the SiO_2 as inorganic dielectrics, and decrease the K value from 4.2 to 2.7. The MSQ acts as a hard mask for etching the FLARE^an etch stop layer for forming a trench and a Cu CMP buffer layer in "Dual Hard Madk Method", which has been developed by our group. It was demonstrated by evaluating contact resistance and leakage current that the substitution does not cause any damage or degradation to the interconnect system. Low and uniform contact resistance and low leakage current were obtained without significant difference between the SiO_2/FLARE^ and the MSQ/FLARE^ systems. The effect of reducing the effective dielectric constant is demonstrated by using a ring oscillator to measure stage delay time, the wiring load length and height of which are respectively 180 mm and 450 nm. The measurement frequency is 1 MHz. It is improved by 33% in comparison with Al/SiO_2 system.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Cu interconnects / Dual Damascene / Dual Hard Mask Method / Organic material / MSQ
Paper #	ED2000-136,SDM2000-118,ICD-2000-72
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Conference Information
Committee	ICD
Conference Date	2000/8/18(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	ED2000-136 / SDM2000-118 / ICD-2000-72 Multilevel interconnects Technologies Using Cu and low-k Dielectrics
Sub Title (in English)
Keyword(1)	Cu interconnects
Keyword(2)	Dual Damascene
Keyword(3)	Dual Hard Mask Method
Keyword(4)	Organic material
Keyword(5)	MSQ
1st Author's Name	I. Yamamura
1st Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation()
2nd Author's Name	T. Hasegawa
2nd Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
3rd Author's Name	K. Ikeda
3rd Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
4th Author's Name	K. Tokunaga
4th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
5th Author's Name	M. Fukasawa
5th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
6th Author's Name	H. Kito
6th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
7th Author's Name	K. Miyata
7th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
8th Author's Name	N. Komai
8th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
9th Author's Name	M. Taguchi
9th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
10th Author's Name	S. Hirano
10th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
11th Author's Name	T. Tatsumi
11th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
12th Author's Name	S. Kadomura
12th Author's Affiliation	LSI Business & Technology Development Group, C.N.C.Sony Corporation
Date	2000/8/18
Paper #	ED2000-136,SDM2000-118,ICD-2000-72
Volume (vol)	vol.100
Number (no)	270
Page	pp.pp.-
#Pages	6
Date of Issue