| Presentation | 2000/8/18 ED2000-131 / SDM2000-113 / ICD-2000-67 A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Surface Migration Yoshitaka Tsunashima, Tsutomu Sato, Ichiro Mizushima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new innovative technique, Empty Space in Silicon(ESS), was successfully developed as a unique practical method to realize Silicon on Nothing (SON) structure. ESS is a self-organizing process to transform sub-micron trenches into desired shapes of empty spaces using surface migration phenomenon at high temperature. Fabricated SON layer had excellent crystal qualities for ULSI applications. ESS is a promising candidate, which can take the place of SOI. Moreover, ESS would have a potential to change the LSI structure and process drastically. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | surface migration / SOI / SON / self-organizing process / transformation |
| Paper # | ED2000-131,SDM2000-113,ICD-2000-67 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2000/8/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-131 / SDM2000-113 / ICD-2000-67 A New Substrate Engineering Technique to Realize Silicon on Nothing (SON) Structure Utilizing Surface Migration |
| Sub Title (in English) | |
| Keyword(1) | surface migration |
| Keyword(2) | SOI |
| Keyword(3) | SON |
| Keyword(4) | self-organizing process |
| Keyword(5) | transformation |
| 1st Author's Name | Yoshitaka Tsunashima |
| 1st Author's Affiliation | Process & Manufacturing Center, Semiconductor Company, Toshiba() |
| 2nd Author's Name | Tsutomu Sato |
| 2nd Author's Affiliation | Process & Manufacturing Center, Semiconductor Company, Toshiba |
| 3rd Author's Name | Ichiro Mizushima |
| 3rd Author's Affiliation | Process & Manufacturing Center, Semiconductor Company, Toshiba |
| Date | 2000/8/18 |
| Paper # | ED2000-131,SDM2000-113,ICD-2000-67 |
| Volume (vol) | vol.100 |
| Number (no) | 270 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |